Diodes BC857AT, BT, CT User Manual
Bc857at, bt, ct, Features, Mechanical data
BC857AT, BT, CT
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Die Construction
•
Complementary NPN Types Available (BC847AT,BT,CT)
•
Ultra-Small Surface Mount Package
•
Lead Free/RoHS Compliant (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
•
"Green" Device (Note 4 and 5)
Mechanical Data
•
Case: SOT-523
•
Case Material - Molded Plastic. UL Flammability
Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
•
Terminal Connections: See Diagram
•
Marking Code: See Table Below & Diagram on Page 2
•
Ordering & Date Code Information: See Page 2
•
Weight: 0.002 grams (approximate)
DS30275 Rev. 9 - 2
1 of 3
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BC857AT, BT, CT
© Diodes Incorporated
Type
Marking
BC857AT
3V
BC857BT
3W
BC857CT
3G
SOT-523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
⎯
⎯
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
α
0
°
8
°
⎯
All Dimensi
mm
ons in
A
M
J
L
D
B C
H
K
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-45
V
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current
I
C
-100
mA
Power Dissipation (Note 1)
P
d
150
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θJA
833
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 3)
V
(BR)CBO
-50
—
—
V
I
C
= 10
μA, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 3)
V
(BR)CEO
-45
—
—
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage (Note 3) V
(BR)EBO
-5
—
—
V
I
E
= 1
μA, I
C
= 0
DC Current Gain (Note 3) Current Gain A
B
C
h
FE
125
220
420
—
290
520
250
475
800
—
V
CE
= -5.0V, I
C
= -2.0mA
Collector-Emitter Saturation Voltage (Note 3)
V
CE(SAT)
—
—
—
-300
-650
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage (Note 3)
V
BE(SAT)
—
—
-700
-900
—
—
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Voltage (Note 3)
V
BE(ON)
-600
—
—
—
-750
-820
mV
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
Collector-Cutoff Current (Note 3)
I
CBO
—
—
—
—
-15
-4.0
NA
µA
V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
Gain Bandwidth Product
f
T
100
—
—
MHz
V
CE
= -5.0V, I
C
= -10mA, f = 100MHz
Output Capacitance
C
OB
—
—
4.5
pF
V
CB
= -10V, f = 1.0MHz
Noise Figure
NF
—
—
10
dB
I
C
= -0.2mA, V
CE
= -5.0Vdc,
R
S
= 2.0K
Ω, f = 1.0KHz,
BW = 200Hz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
G
TOP VIEW
C
E
B
N