Diodes BC847BLP4 - Manual (Page 2)

BC847BLP4
Document number: DS31297 Rev. 6 - 2
2 of 5
www.diodes.com
February 2011
© Diodes Incorporated
BC847BLP4
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V CBO
50 V
Collector-Emitter Voltage V
CEO
45 V
Emitter-Base Voltage V
EBO
6.0 V
Collector Current I C
100 mA
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P D
250 mW
Thermal Resistance, Junction to Ambient (Note 4) R θJA 500 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic (Note 5) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
50 — — V I
C
= 10
μA, I
B
= 0
Collector-Emitter Breakdown Voltage BV
CEO
45 — — V I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
6 — — V I
E
= 1 μA, I
C
= 0
DC Current Gain h
FE
200 350 450 — V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage V
CE(sat)
—
80
200
250
600
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage V BE(sat)
—
— 700
900 —
—
mV
I C = 10mA, I B = 0.5mA
I C = 100mA, I B = 5.0mA
Base-Emitter Voltage V
BE(on)
580
—
640
725 700
770
mV
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
Collector-Cutoff Current I
CBO
—
— —
— 15
5.0
nA
µA V
CB
= 30V
V
CB
= 30V, T
A
= 150°C
Gain Bandwidth Product f
T
100 — — MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Collector-Base Capacitance C
CBO
— 3.0 — pF V
CB
= 10V, f = 1.0MHz
Notes: 4. Device mounted on FR-4 PCB.
5. Short duration pulse test used to minimize self-heating effect.