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Electrical characteristics, Bc847bfa – Diodes BC847BFA User Manual

Page 3

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BC847BFA

Document number: DS36019 Rev. 1 - 2

3 of 6

www.diodes.com

July 2013

© Diodes Incorporated

BC847BFA

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typical

Max

Unit

Test

Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BV

CBO

50 150

V

I

C

= 50µA, I

B

= 0

Collector-Emitter Breakdown Voltage

BV

CES

50 150



I

C

= 50µA, I

B

= 0

Collector-Emitter Breakdown Voltage (Note 8)

BV

CEO

45 65

V

I

C

= 1mA, I

B

= 0

Collector-Base Breakdown Voltage

BV

EBO

6.0 8.35

V

I

E

= 50

A, I

C

= 0

Collector-Base Cutoff Current

I

CBO

15 nA

V

CB

= 40V

Collector-Emitter Cutoff Current

I

CES





15 nA

V

CE

= 40V

ON CHARACTERISTICS (Note 8)

DC Current Gain

h

FE

100
200

220
260

470

I

C

= 10µA, V

CE

= 5.0V

I

C

= 2.0mA, V

CE

= 5.0V

Collector-Emitter Saturation Voltage

V

CE(sat)

50

122

125
300

mV

I

C

= 10mA, I

B

= 0.5mA

I

C

= 100mA, I

B

= 5.0mA

Base-Emitter Saturation Voltage

V

BE(sat)

760
880

1000
1100

mV

I

C

= 10mA, I

B

= 0.5mA

I

C

= 100mA, I

B

= 5.0mA

Base-Emitter Voltage

V

BE(on)

580

650
725

750
800

mV

I

C

= 2.0mA, V

CE

= 5V

I

C

= 10mA, V

CE

= 5V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

obo

1.5

pF

V

CB

= 10.0V, f = 1.0MHz, I

E

= 0

Current Gain-Bandwidth Product

f

T

100 170

MHz

V

CE

= 5V, I

C

= 10mA,

f = 100MHz

Notes:

8. Measured under pulsed conditions. Pulse width

 300µs. Duty cycle  2%.