Diodes 2DD2679 User Manual
Features, Mechanical data, Maximum ratings
2DD2679
Document number: DS31629 Rev. 2 - 2
1 of 4
December 2008
© Diodes Incorporated
2DD2679
NEW PROD
UC
T
LOW V
NPN SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
•
Ideally Suited for Automated Assembly Processes
•
Ideal for Medium Power Switching or Amplification Applications
•
Complementary PNP Type (2DB1714) Available
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
Mechanical Data
• Case:
SOT89-3L
•
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 4
•
Ordering Information: See Page 4
•
Weight: 0.072 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
30 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
6 V
Peak Pulse Current
I
CM
4 A
Continuous Collector Current
I
C
2 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 3) @ T
A
= 25°C
P
D
0.9 W
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
R
θJA
139 °C/W
Power Dissipation (Note 4) @ T
A
= 25°C
P
D
2 W
Thermal Resistance, Junction to Ambient Air (Note 4) @ T
A
= 25°C
R
θJA
62.5 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V
(BR)CBO
30
⎯
⎯
V
I
C
= 10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 5)
V
(BR)CEO
30
⎯
⎯
V
I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6
⎯
⎯
V
I
E
= 10
μA, I
C
= 0
Collector Cut-Off Current
I
CBO
⎯
⎯
0.1
μA
V
CB
= 30V, I
E
= 0
Emitter Cut-Off Current
I
EBO
⎯
⎯
0.1
μA
V
EB
= 6V, I
C
= 0
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
80 370 mV
I
C
= 1.5A, I
B
= 75mA
DC Current Gain
h
FE
270
⎯
680
⎯
V
CE
= 2V, I
C
= 200mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
11
⎯
pF
V
CB
= 10V, I
E
= 0,
f = 1MHz
Current Gain-Bandwidth Product
f
T
⎯
240
⎯
MHz
V
CE
= 2V, I
C
= 100mA,
f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
2
Copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
Top View
Device Schematic
Pin Out Configuration
4
3
2
1
C
C
B
E
TOP VIEW
3
1
2,4
COLLECTOR
EMITTER
BASE