Diodes 2DD1766P/Q/R - Manual

2DD1766P/Q/R
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (2DB1188)
•
Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
Mechanical Data
•
Case: SOT89-3L
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
•
Weight: 0.072 grams (approximate)
NEW PROD
UC
T
SOT89-3L
3
1
2,4
COLLECTOR
EMITTER
BASE
4
3
2
1
C C
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
40 V
Collector-Emitter Voltage V
CEO
32 V
Emitter-Base Voltage V
EBO
5 V
Peak Pulse Current I
CM
2.5 A
Continuous Collector Current I
C
2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25°C P
D
1 W
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C R θJA 125 °C/W
Operating and Storage Temperature Range T
j
, T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
40 ⎯ ⎯ V I
C
= 50 μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
32 ⎯ ⎯ V I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
5 ⎯ ⎯ V I
E
= 50
μA, I
C
= 0
Collector Cut-Off Current I
CBO
⎯ ⎯ 1 μA V
CB
= 20V, I
E
= 0
Emitter Cut-Off Current I EBO
⎯ ⎯ 1 μA
V EB = 4V, I C = 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯ 0.3 0.8 V I
C
= 2A, I
B
= 0.2A
82 ⎯ 180 ⎯
120 ⎯ 270 ⎯ DC Current Gain
2DD1766P
2DD1766Q
2DD1766R
h
FE
180 ⎯ 390 ⎯
V
CE
= 3V, I
C
= 0.5A
SMALL SIGNAL CHARACTERISTICS
Transition Frequency f T
⎯ 220 ⎯ MHz
V CE = 5V, I E = -50mA,
f = 100MHz
Output Capacitance C
ob
⎯ 13 ⎯ pF
V
CB
= 10V, I
E
= 0,
f = 1MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
DS31167 Rev. 4 - 2 1 of 4
www.diodes.com
2DD1766P/Q/R
© Diodes Incorporated