Diodes DCP68/-25 User Manual
Dcp68/-25, Features, Mechanical data
DS30797 Rev. 6 - 2
1 of 4
www.diodes.com
DCP68/-25
© Diodes Incorporated
DCP68/-25
NPN SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
•
Complementary PNP Type Available (DCP69)
•
Ideally Suited for Automated Assembly Processes
•
Ideal for Medium Power Switching or Amplification Applications
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
Mechanical Data
•
Case: SOT-223
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals: Finish - Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.115 grams
2
3
4
1
SOT-223
NEW PRODUCT
3
1
2,4
COLLECTOR
BASE
EMITTER
4
3
2
1
C
C
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Collector-Base Voltage
V
CBO
25 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
5.0 V
Collector Current
I
C
1.0 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation @ T
A
= 25ºC (Note 3)
P
D
1 W
Thermal Resistance, Junction to Ambient Air @ T
A
= 25°C (Note 3)
R
θJA
125
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to 150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Breakdown Voltage
V
(BR)CES
25 — — V
I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
20 — — V
I
C
= 1.0mA, I
B
= 0
Collector-Base Breakdown Voltage
V
(BR)CBO
25 — — V
I
C
= 10
μA, I
E
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
5.0 — — V
I
E
= 10
μA, I
C
= 0
Collector-Base Cutoff Current
I
CBO
— — 100 nA
V
CB
= 25V, I
E
= 0
Emitter-Base Cutoff Current
I
EBO
— — 10
μA
V
EB
= 5.0V, I
C
= 0
ON CHARACTERISTICS (Note 4)
DCP68, DCP68-25
50
60
—
—
—
—
V
CE
= 10V, I
C
= 5.0mA
V
CE
= 1.0V, I
C
= 1.0A
DCP68
85 — 375
V
CE
= 1.0V, I
C
= 500mA
DC Current Gain
DCP68-25
h
FE
160 — 375
—
V
CE
= 1.0V, I
C
= 500mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
— — 0.5 V
I
C
= 1.0A, I
B
= 100mA
Base-Emitter Turn-On Voltage
V
BE (ON)
— — 1.0 V
V
CE
= 1.0V, I
C
= 1.0A
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
— 330 — MHz
I
C
= 100mA, V
CE
= 5.0V
f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.