Diodes BCX69 - Manual

SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 – FEBRUARY 1995 ✪
FEATURES
* High gain and low saturation voltages
COMPLEMENTARY TYPE – BCX68
PARTMARKING DETAIL – BCX69 – CJ
BCX69-16 – CG
BCX69-25 – CH
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-25 V
Collector-Emitter Voltage V CEO -20 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I CM -2 A
Continuous Collector Current I
C
-1 A
Power Dissipation at T
amb
=25°C P
tot
1 W
Operating and Storage Temperature Range T
j
:T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown voltage V
(BR)CBO
-25 V IC =-100 µ A
Collector-Emitter
Breakdown Voltage V
(BR)CEO
-20 V IC =-10mA
Emitter-Base
Breakdown Voltage V
(BR)EBO
-5 V I
E
=-100 µ A
Collector Cut-Off
Current I
CBO
-0.1
-10 µ A
µ A
V
CB
=-25V
V
CB
=-25V, T
amb
=150°C
Emitter Cut-Off Current I
EBO
-10 µ A V
EB
=-5V
Collector-Emitter
Saturation Voltage V
CE(sat)
-0.5 V I
C
=-1A, I
B
=-100mA
Base-Emitter Turn-On
Voltage V
BE(on)
-1.0 V I
C
=-1A, V
CE
=-1V
Static Forward Current
Transfer Ratio h
FE
BCX69-16
BCX69-25
50
85
60
100
160
250
375
250
400
I
C
=-5mA, V
CE
=-1V
I
C
=-500mA, V
CE
=-1V
I
C
=-1A, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V
Transition Frequency f
T
100 MHz I
C
=-100mA, V
CE
=-5V,
f=100MHz
Output Capacitance C
obo
25 pF V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
For typical characteristics graphs see FMMT549 datasheet.
BCX69
C
C
B
E
SOT89
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