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Diodes 2DD1621T User Manual

Features new product, Mechanical data, Maximum ratings

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2DD1621T

NPN SURFACE MOUNT TRANSISTOR

Features

NEW PRODUCT

Epitaxial Planar Die Construction

Ideally Suited for Automated Assembly Processes

Ideal for Medium Power Switching or Amplification Applications

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

Mechanical Data

Case: SOT89-3L

Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.072 grams (approximate)

SOT89-3L

3

1

2,4

COLLECTOR

EMITTER

BASE

4

3

2

1

C

C

B

E

TOP VIEW

Schematic and Pin Configuration

Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Unit

Collector-Base Voltage

V

CBO

30 V

Collector-Emitter Voltage

V

CEO

25 V

Emitter-Base Voltage

V

EBO

6.0 V

Collector Current

I

C

2.0 A

Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 3) @ T

A

= 25°C

P

D

1 W

Thermal Resistance, Junction to Ambient Air (Note 3) @T

A

= 25°C

R

θJA

125 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Min

Typ

Max

Unit

Test

Conditions

OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage

V

(BR)CBO

30

V

I

C

= 10

μA, I

E

= 0

Collector-Emitter Breakdown Voltage

V

(BR)CEO

25

V

I

C

= 1mA, I

B

= 0

Emitter-Base Breakdown Voltage

V

(BR)EBO

6.0

V

I

C

= 10

μA, I

C

= 0

Collector-Base Cutoff Current

I

CBO

100 nA

V

CB

= 20V, I

E

= 0

Emitter-Base Cutoff Current

I

EBO

100 nA

V

EB

= 4.0V, I

C

= 0

ON CHARACTERISTICS (Note 4)

DC Current Gain

h

FE

200

65


400

V

CE

= 2.0V, I

C

= 0.1A

V

CE

= 2.0V, I

C

= 1.5A

Collector-Emitter Saturation Voltage

V

CE(SAT)

0.12 0.4 V

I

C

= 1.5A, I

B

= 75mA

Base-Emitter Saturation Voltage

V

BE(SAT)

0.9 1.2 V

I

C

= 1.5A, I

B

= 75mA

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

f

T

300

MHz

V

CE

= 10V, I

C

= 50mA,

f = 100MHz

Output Capacitance

C

obo

16

pF

V

CB

= 10V, I

E

= 0, f = 1MHz

SWITCHING CHARACTERISTICS
Turn On Time

t

on

70

ns

Storage Time

t

stg

170

ns

Fall Time

t

f

25

ns

V

CE

= 12V, V

BE

= 5V,

I

B1

= I

B2

= 25mA, I

C

= 500mA

Notes:

1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%.

DS31240 Rev. 2 - 2

1 of 4

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2DD1621T

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