Diodes 2DB1697 - Manual (Page 2)

2DB1697
Document number: DS31618 Rev. 3 - 2
2 of 5
www.diodes.com
April 2012
© Diodes Incorporated
2DB1697
NEW PROD
UC
T
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V CBO
-15 V
Collector-Emitter Voltage V CEO
-12 V
Emitter-Base Voltage V
EBO
-6 V
Peak Pulse Current I
CM
-4 A
Continuous Collector Current I
C
-2 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
0.9 W
Thermal Resistance, Junction to Ambient Air (Note 4) R θJA 139 °C/W
Power Dissipation (Note 5) P
D
2 W
Thermal Resistance, Junction to Ambient Air (Note 5) R θJA 62.5 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V
(BR)CBO
-15 ⎯ ⎯ V I
C
= -100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 6) V
(BR)CEO
-12 ⎯ ⎯ V I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-6 ⎯ ⎯ V I
E
= -100 μA, I
C
= 0
Collector Cut-Off Current I CBO
⎯ ⎯ -0.1 μA
V CB = -15V, I E = 0
Emitter Cut-Off Current I
EBO
⎯ ⎯ -0.1 μA
V
EB
= -6V, I
C
= 0
ON CHARACTERISTICS (Note 6)
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯ -65 -180 mV I
C
= -1A, I
B
= -50mA
DC Current Gain h
FE
270 ⎯ 680 ⎯
V
CE
= -2V, I
C
= -200mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance C
obo
⎯ 40 ⎯ pF
V
CB
= -10V, I
E
= 0,
f = 1MHz
Current Gain-Bandwidth Product f T
⎯ 140 ⎯ MHz
V CE = -2V, I C = -100mA,
f = 100MHz
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
5. Device mounted on FR-4 PCB with 1 inch
2 copper pad layout.
6. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.