Diodes 2DB1386Q/R - Manual (Page 2)

2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
2 of 6
www.diodes.com
February 2013
© Diodes Incorporated
2DB1386Q/R
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-30 V
Collector-Emitter Voltage V
CEO
-20 V
Emitter-Base Voltage V
EBO
-6 V
Continuous Collector Current I
C
-5 A
Peak Pulse Current I
CM
-10 A
Base Current I
B
-500 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
1 W
Thermal Resistance, Junction to Ambient Air (Note 5) R
JA
125 °C/W
Thermal Resistance, Junction to Leads (Note 6) R
θJL
19 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 5. For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in steady state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
Thermal Characteristics and Derating Information
0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
Derating Curve
Temperature (°C)
M
ax P
owe
r Di
ssi
pa
tio
n
(W
)
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
100
120
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
herm
al
Re
si
st
an
ce
(°
C/
W
)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse. T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
M
ax
P
o
we
r Di
ssi
pa
tio
n
(W)