Diodes BAV70DV - Manual (Page 2)

BAV70DV
Document number: DS35311 Rev. 4 - 2
2 of 4
www.diodes.com
January 2012
© Diodes Incorporated
BAV70DV
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
75 V
RMS Reverse Voltage V
R(RMS)
53 V
Forward Continuous Current (Note 4) I FM
300 mA
Average Rectified Output Current (Note 4) I
O
150 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
μs
@ t = 1.0s
I
FSM
2.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
200 mW
Thermal Resistance Junction to Ambient Air (Note 4) R θJA 625 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 5) V
(BR)R
75 ⎯ V I
F
= 2.5
μA
Forward Voltage V
F
⎯
0.715
0.855
1.0
1.25
V
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I F = 150mA
Reverse Current (Note 5) I
R
⎯
2.5
50
30
25
μA
μA
μA
nA V
R
= 75V
V
R
= 75V, T
J
= 150
°C
V
R
= 25V, T
J
= 150 °C
V
R
= 20V
Total Capacitance C T
⎯ 2.0 pF V R = 0, f = 1.0MHz
Reverse Recovery Time t
rr
⎯ 4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
Ω
Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
0 125 175
150
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve, Total Package
A
°
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
25 100 50 75 150
50
200
250
Note 4
0.01
0.1
1
10
100
1,000
0 0.2 0.4 0.6 0.8 1.0 1.2
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, Per Element
F
I
, INS
T
AN
T
AN
E
O
U
S F
O
R
WA
R
D
C
U
R
R
EN
T
(m
A
)
F