Diodes BAV199W - Manual (Page 2)

BAV199W
Document number: DS30462 Rev. 7 - 2
2 of 4
www.diodes.com
February 2012
© Diodes Incorporated
BAV199W
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V R
85 V
RMS Reverse Voltage V
R(RMS)
60 V
Forward Continuous Current (Note 6) Single diode
Double diode
I
FM
160
140
mA
Repetitive Peak Forward Current (Note 6) I
FRM
500 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
μs
@ t = 1.0ms
@ t = 1.0s
I
FSM
4.0
1.0
0.5
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 6) P
D
200 mW
Thermal Resistance Junction to Ambient Air (Note 6) R θJA 625 °C/W
Operating and Storage Temperature Range T J , T STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 7) V
(BR)R
85 ⎯ ⎯ V I
R
= 100 μA
Forward Voltage V
F
⎯ ⎯
0.90
1.0
1.1
1.25
V
I F = 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Leakage Current (Note 7) I
R
⎯ ⎯
5.0
80
nA
nA V
R
= 75V
V R = 75V, T J = 150
°C
Total Capacitance C
T
⎯ 2 ⎯ pF V
R
= 0, f = 1.0MHz
Reverse Recovery Time t
rr
⎯ ⎯
3.0
μs
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100 Ω
Notes: 6. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
0
50
100
0 25 50 75 100 125 150
P
,
P
O
WE
R
D
ISSI
P
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve, Total Package
A
150
200
250
300
Note 6
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1
1
10
100
I
, INS
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(mA
)
F
1,000
Fig. 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A