Diodes BAS16VV - Manual (Page 2)

B A S 1 6 V V
Document number: DS35791 Rev. 3 - 2
2 of 4
www.diodes.com
June 2012
© Diodes Incorporated
BAS16VV
Maximum Ratings
(@T
A
= 25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
100 V
RMS Reverse Voltage V
R(RMS)
71 V
Forward Continuous Current (Note 5) I
FM
200 mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0
μs
@ t = 1.0ms
@ t = 1.0s I
FSM
4.0
1.0
0.5
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
350 mW
Thermal Resistance Junction to Ambient Air (Note 5) R θJA 357 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= 25°C unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V
(BR)R
100 ⎯ V I
R
= 100 μA
Forward Voltage V
F
⎯ 0.715
V
I
F
= 1.0mA
⎯ 0.855 I
F
= 10mA
⎯ 1.0 I
F
= 50mA
⎯ 1.25 I F = 150mA
Leakage Current (Note 6) I
R
⎯ 0.5 μA
V
R
= 80V
⎯ 50 μA V
R
= 80V, T
J
= 150 °C
⎯ 30 μA
V R = 25V, T J = 150
°C
⎯ 30 nA V
R
= 25V
Total Capacitance C
T
⎯ 1.5 pF V
R
= 0, f = 1.0MHz
Reverse Recovery Time t rr
⎯ 4.0 ns
I
F
= I
R
= 10mA,
I rr = 0.1 x I R , R L = 100
Ω
Notes: 5. Device mounted on FR-4 PCB, on minimum recommended, 2oz copper pad layout.
6. Short duration pulse test used to minimize self-heating effect.
0
50
100
150
200
250
25 0 50 75 100 125 150
P
,
P
O
WE
R
DI
SSI
P
A
T
IO
N
(mW
)
D
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Derating Curve, Total Package
300
350
Note 5
R = 357°C/W
JA θ
0 0.4 0.8 1.2 1.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, Per Element
F
0.1
1
0.01
0.001
I,
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A
)
F