Diodes BAS16HLP - Manual (Page 2)

BAS16HLP
Document number: DS31740 Rev. 3 - 2
2 of 5
www.diodes.com
April 2011
© Diodes Incorporated
BAS16HLP
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage V
RM
125 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
100 V
RMS Reverse Voltage V
R(RMS)
71 V
Forward Continuous Current I
FM
215 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
μs
@ t = 1.0ms
@ t = 1.0s
I
FSM
4
1
0.5
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
250 mW
Thermal Resistance Junction to Ambient (Note 4) R θJA 500 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Conditions
Reverse Breakdown Voltage (Note 5) V
(BR)R
100 ⎯ V I
R
= 100
μA
Forward Voltage V
F
⎯
⎯
⎯
⎯
0.715
0.855
1.0
1.25
V
I F = 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Peak Reverse Current (Note 5) I
R
⎯
500
50
30
30
nA
μA
μA
nA V
R
= 80V
V
R
= 80V, T
J
= 150
°C
V
R
= 25V, T
J
= 150 °C
V
R
= 25V
Total Capacitance C
T
⎯ 1.5 pF V
R
= 0V, f = 1.0MHz
Reverse Recovery Time t
rr
⎯ 4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100 Ω
Notes: 4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.