Diodes BAS116UDJ - Manual (Page 3)

BAS116UDJ
Document number: DS35244 Rev. 3 - 2
3 of 4
www.diodes.com
April 2012
© Diodes Incorporated
BAS116UDJ
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
50
100
25 50 75 100 125 150
P
,
P
O
WE
R
DISS
IP
A
T
IO
N
(mW
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
A
150
200
250
300
0
Note 5
0.001
0.01
0.1
1
10
100
1,000
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
I,
I
N
S
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(mA
)
F
Fig. 2 Typical Forward Characteristics - Per Element
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0 10 20 30 40 50 60 70 80 90 100
Fig. 3 Typical Reverse Characteristics - Per Element
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
0.01
0.1
1
10
100
I
, INS
T
AN
T
AN
E
O
U
S
R
EV
E
R
SE
C
U
R
R
EN
T
(n
A
)
R
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0 5 10 15 20 25 30 35 40
Fig. 4 Typical Total Capacitance vs. Reverse Voltage -
Per Element
V , DC REVERSE VOLTAGE (V)
R
0.25
0.75
1.25
1.75
0.50
1.00
1.50
2.00
0
C
,
T
O
T
AL
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
f = 1MHz
Package Outline Dimensions
SOT963
Dim Min Max Typ
A 0.40 0.50 0.45
A1 0 0.05 -
c 0.120 0.180 0.150
D 0.95 1.05 1.00
E 0.95 1.05 1.00
E1 0.75 0.85 0.80
L 0.05 0.15 0.10
b 0.10 0.20 0.15
e 0.35 Typ
e1 0.70 Typ
All Dimensions in mm
L
c
E
D
e1
e
E1
b (6 places)
A
A1