Diodes 1N4448W - Manual (Page 2)

1N4448W
Document number: DS12002 Rev. 21 - 2
2 of 4
www.diodes.com
April 2014
© Diodes Incorporated
1N4448W
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
75 V
RMS Reverse Voltage V
R(RMS)
53 V
Forward Continuous Current I
FM
500 mA
Average Rectified Output Current I
O
250 mA
Non-Repetitive Peak Forward Surge Current @t = 1.0μs
@t = 1.0s
I
FSM
4.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
400 mW
Thermal Resistance Junction to Ambient Air (Note 5) R
θJA
315 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V
(BR)R
75 ⎯ V I
R
= 10μA
Forward Voltage V
FM
0.62
⎯
⎯
⎯
0.72
0.855
1.0
1.25
V
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
Peak Reverse Current (Note 6) I
RM
⎯
2.5
50
30
25
μA
μA
μA
nA V
R
= 75V
V
R
= 75V, T
J
= +150°C
V
R
= 25V, T
J
= +150°C
V
R
= 20V
Total Capacitance C
T
⎯ 4.0 pF V
R
= 0, f = 1.0MHz
Reverse Recovery Time t
rr
⎯ 4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes: 5. Part mounted on FR-4 PC board with 1 inch by 1 inch pad layout.
6. Short duration pulse test used to minimize self-heating effect.
0 25 50 75 100 125 150
P
, P
O
WE
R
D
IS
S
IP
A
T
IO
N
(mW
)
D
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve
A
°
0
200
400
500
100
300
R = 315°C/W θJA
0.1
1
10
100
1000
0 200 400 600 800 1000 1200 1400 1600
Figure 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
I
, IN
ST
ANT
A
NEOUS
F
O
RW
ARD CU
RRENT
(
m
A)
F
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
T = 25°C
A