Electrical characteristics – Diodes 1N4448HWS User Manual
Page 2
1N4448HWS
Document number: DS30196 Rev. 12 - 2
2 of 4
September 2013
© Diodes Incorporated
1N4448HWS
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 6)
V
BR(R)
80
V
I
R
= 100
A
Forward Voltage
V
FM
0.62
0.72
0.855
1.0
1.25
V
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
Peak Reverse Current (Note 6)
I
RM
100
50
30
25
nA
μA
μA
nA
V
R
= 80V
V
R
= 75V, T
J
= +150°C
V
R
= 25V, T
J
= +150°C
V
R
= 20V
Total Capacitance
C
T
3.5
pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
4.0
ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes:
5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
6. Short duration pulse test used to minimize self-heating effect.
0
100
300
0
25
50
75
125
150
P
, P
O
WE
R
DI
S
S
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve
A
°
200
175
Note 5
0.1
1
10
100
1000
0
200
400
600
800 1000 1200 1400 1600
Figure 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
I
, IN
ST
ANT
A
NEOU
S
F
O
RW
ARD CU
RRENT
(
m
A)
F
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
T = 25°C
A
0.10
1.0
10.0
0.01
0.001
0
20
40
60
80
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
R
T = 100 C
A
°
T = 0 C
A
°
T = 75 C
A
°
T = 50 C
A
°
T = 25 C
A
°
T = -30 C
A
°
I
, INST
A
N
TA
NEOUS
REVERS
E CURRE
N
T
(
A
)
R
0
4
3
2
5
1
6
V , DC REVERSE VOLTAGE (V)
Fig. 4 Total Capacitance vs. Reverse Voltage
R
C
, T
O
TA
L
C
A
P
A
C
IT
A
N
C
E (
pF)
T
0
1
2
3
4