Diodes 1N4448HWT - Manual (Page 2)

1N4448HWT
Document number: DS30395 Rev. 10 - 2
2 of 4
www.diodes.com
September 2013
© Diodes Incorporated
1N4448HWT
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 7) P
D
150 mW
Thermal Resistance Junction to Ambient (Note 7) R
JA
833 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Conditions
Reverse Breakdown Voltage (Note 8) V
(BR)R
80  V I
R
= 100 A
Forward Voltage V
F
0.62



0.72
0.855
1.0
1.25
V
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
Peak Reverse Current (Note 8) I
R

100
50
30
25
nA
μA
μA
nA V
R
= 80V
V
R
= 75V, T
J
= +150°C
V
R
= 25V, T
J
= +150°C
V
R
= 20V
Total Capacitance C
T
 3.0 pF V
R
= 0.5V, f = 1.0MHz
Reverse Recovery Time t
rr
 4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes: 7. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
8. Short duration pulse test used to minimize self-heating effect.
0
50
0 25 50 75 100 125
P
, P
O
WE
R
D
ISSI
P
A
T
IO
N
(m
W
)
D
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve
A
°
100
200
150
150
0.1
1
10
100
1000
0 200 400 600 800 1000 1200 1400 1600
Fig. 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
I
, IN
ST
ANT
A
NEOUS
F
O
RW
ARD CU
RREN
T
(
m
A)
F
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
T = 25°C
A