Marking information, Maximum ratings, Thermal characteristics – Diodes BAS40/ -04/ -05/ -06 User Manual
Page 2: Electrical characteristics
BAS40/ -04/ -05/ -06
Document number: DS11006 Rev. 25 - 2
2 of 5
December 2013
© Diodes Incorporated
BAS40/ -04/ -05/ -06
Marking Information
Date Code Key
Year
1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code
K
L
M
N
P
R
S
T
U
V
W X Y Z A B C
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N D
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40
V
Forward Continuous Current (Note 6)
I
FM
200
mA
Forward Surge Current (Note 6)
@ t < 1.0s
I
FSM
600
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
P
D
350
mW
Thermal Resistance, Junction to Ambient Air (Note 6)
R
JA
357
°C/W
Operating Temperature Range
T
J
-55 to +125
°C
Storage Temperature Range
T
STG
-65 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 7)
V
(BR)R
40
V
I
R
= 10µA
Forward Voltage
V
F
380
1000
mV
t
p
< 300µs, I
F
= 1.0mA
t
p
< 300µs, I
F
= 40mA
Reverse Leakage Current (Note 7)
I
R
20
200
nA
t
p
< 300µs, V
R
= 30V
Total Capacitance
C
T
4.0
5.0
pF
V
R
= 0V, f =1.0MHz
Reverse Recovery Time
t
rr
5.0
ns
I
F
= I
R
= 10mA to I
R
= 1.0mA,
R
L
= 100Ω
Notes:
6. Part mounted on FR-4 board with recommended pad layout, which can be found on our websit
7. Short duration pulse test used to minimize self-heating effect.
xxx = Product Type Marking Code
K43 = BAS40
K44 = BAS40-04
K45 = BAS40-05
K46 = BAS40-06
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Chengdu A/T Site
Shanghai A/T Site