Absolute maximum ratings, Bat750, 25°c unless otherwise stated) – Diodes BAT750 SOT23 User Manual
Page 2
BAT750
© Zetex Semiconductors plc 2008
Absolute maximum ratings
Electrical characteristics (@ T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Limit
Unit
Collector reverse voltage
V
R
40
V
RMS reverse voltage
V
R(RMS)
28
V
Forward current (continuous)
I
F
750
mA
Forward voltage @ I
F
= 750mA
V
F
490
mV
Average peak forward current; DC = 50%
I
FAV
1500
mA
Non repetitive forward current
t
Յ100S
t
Յ8.3ms
I
FSM
12
5.5
A
Power dissipation @ T
amb
= 25°C
P
tot
350
mW
Typical thermal resistance, junction to ambient air
R
⍜JA
286
°C/W
Storage temperature range
T
stg
-55 to +150
°C
Junction temperature
T
j
125
°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Reverse breakdown
voltage
V
(BR)R
40
60
V
I
R
= 300
A
Forward voltage
V
F
225
280
mV
I
F
= 50mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300
duty cycle Յ2%.
235
310
mV
I
F
= 100mA
290
350
mV
I
F
= 250mA
340
420
mV
I
F
= 500mA
390
490
mV
I
F
= 750mA
440
540
mV
I
F
= 1000mA
530
650
mV
I
F
= 1500mA
Reverse current
I
R
50
100
A
V
R
= 30V
Diode capacitance
C
D
25
-
pF
V
R
= 25V, f = 1.0MHz
Reverse recovery time
t
rr
5
-
ns
I
F
= I
R
= 100mA,
I
rr
= 10mA