Zds1009 – Diodes ZDS1009 User Manual
Page 2
ISSUE 2 - JANUARY 2000
ZDS1009
Parameter
Symbol
Min
Max
Unit
Conditions
Breakdown Voltage
BV
Y1-X1
120
V
I
Y1
=100
µ
A
Breakdown Voltage
BV
X1-E1
-30
V
I
X1
=-10mA
Breakdown Voltage
BV
Y1-E3
30
V
I
Y1
=10mA
Breakdown Voltage
BV
E1-Y1
-12
V
I
E1
=-100
µ
A
Breakdown Voltage
BV
E2-Y1
-6
V
I
E2
=-100
µ
A
Breakdown Voltage
BV
E3-X1
12
V
I
E3
=100
µ
A
Breakdown Voltage
BV
E4-X1
6
V
I
E4
=100uA
Leakage
I
Y1
50
nA
V
Y1-X1
=100V
Leakage
I
X1
-10
µ
A
V
X1-E1
=-30V, V
y1
=V
E1
Leakage
I
Y1
10
µ
A
V
Y1-E3
=30V,V
X1
=V
E3
Leakage
I
E1
-100
nA
V
E1-Y1
=-8V
Leakage
I
E2
-100
nA
V
E2-Y1
=-4V
Leakage
I
E3
100
nA
V
E3-X1
=8V
Leakage
I
E4
100
nA
V
E4-X1
=4V
Input Voltage
V
Y1-E2
-1.45
-1.65
V
I
Y1
=-1A
Input Voltage
V
Y1-E3
1.45
1.75
V
I
Y1
=1A,V
X1
=V
Y1
Input Voltage
V
X1-E1
-1.45
-1.75
V
I
X1
=-1A,V
X1
=V
Y1
Input Voltage
V
X1-E4
1.45
1.65
V
I
X1
=1A
Transfer
Characteristic
V
OUT
0.99
1.01
V
See Fig 1.V
CC
=5V
R1=R3=R4=100
Ω
, V
IN
=1V
Transfer
Characteristic
V
OUT
1
mV
See Fig 1.V
CC
=5V
R1=R3=R4=100
Ω
, V
IN
=5mV
Output Zero-Offset
Voltage
V
OFFSET
4
mV
See Fig 2.V
CC
=5V,R
2
<1
Ω
R1=R3=R4=100
Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Maximum Operating Voltage
V
y1-x1
120
V
Maximum Voltage (E1-E2,E3-E4)
V
E-E’
10
V
Peak Pulse Current
I
M
4
A
Continuous Current (E1-E4,E2-E3)
I
C
1
A
Total Power Dissipation at T
amb
= 25°C*
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper
equal to 2 inches square.
ELECTRICAL CHARACTERISTICS (at T
amb
=25°C)
2