Diodes ZXRE1004 - Manual (Page 2)

ZXRE1004
ZXRE1004
Document number: DS32172 Rev. 4 - 2
2 of 5
www.diodes.com
June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
Absolute Maximum Ratings
(Voltages to GND Unless Otherwise Stated)
Parameter Rating Unit
Reverse Current 30 mA
Forward Current 10 mA
Operating Temperature -40 to 85 °C
Storage Temperature -55 to 125 °C
Power Dissipation (T
AMB
= 25°C)
SOT23
330 mW
Electrical Characteristics
(Test conditions: Tamb = 25°C, unless otherwise specified.)
Symbol Parameter Condition Min. Typ. Max.
Tol.
(%)
Unit
V
R
Reverse breakdown voltage I
R
= 100µA
1.208
1.183 1.22
1.22 1.232
1.257 1
3
V
I
MIN
Minimum knee current 4 8 µA
I
R
Recommended operating current
range
0.008 20 mA
T
C
(*)
Average reverse breakdown voltage
temperature coefficient
I
R(MIN)
to I
R(MAX)
20 75 ppm/°C
ΔV
R
ΔI
R
Reverse breakdown voltage change
with current I
R
=8µA to 1mA
I
R
=1mA to 20mA
1
10
mV
Z
R
Reverse dynamic impedance
I
R
= 1mA
f = 100Hz
I
AC
= 0.1I
R
0.2 0.6 Ω
E
N
Wideband noise voltage
I
R
=8µA to 100µA
f=10Hz to 10kHz
60 µV(rms)
Notes:
Note: V R(MAX) - V R(MIN) is the maximum deviation in reference
voltage measured over the full operating temperature range.
(†)
0.5% SOT23 only
.
(*)
T
C
=
(V R(MAX) – V R(MIN) ) x 1000000
V
R
x (T
(MAX)
– T
(MIN)
)