Diodes ZXMHC6A07T8 - Manual (Page 4)

ZXMHC6A07T8
ISSUE 2 - MAY 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
60 V I
D
=250µA, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
1 µA V
DS
=60V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
1 3.0 V I
D
=250µA, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.300
0.450 Ω
Ω
V
GS
=10V, I
D
=1.8A
V
GS
=4.5V, I
D
=1.3A
Forward Transconductance (1)(3) g
fs
2.3 S V
DS
=15V,I
D
=1.8A
DYNAMIC
(3)
Input Capacitance C
iss
166 pF
V
DS
=40V, V
GS
=0V,
f=1MHz Output Capacitance C
oss
19.5 pF
Reverse Transfer Capacitance C
rss
8.7 pF
SWITCHING
(2) (3)
Turn-On Delay Time t
d(on)
1.8 ns
V
DD
=30V, I
D
=1.8A
R
G
≅6.0Ω, V
GS
=10V
Rise Time t
r
1.4 ns
Turn-Off Delay Time t
d(off)
4.9 ns
Fall Time t
f
2.0 ns
Gate Charge Q
g
1.65 nC V
DS
=30V,V
GS
=5V,
I
D
=1.8A
Total Gate Charge Q
g
3.2 nC
V
DS
=30V,V
GS
=10V,
I
D
=1.8A Gate-Source Charge Q
gs
0.67 nC
Gate-Drain Charge Q
gd
0.82 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.85 0.95 V T
J
=25°C, I
S
=0.45A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
20.5 ns T
J
=25°C, I
F
=1.8A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Q
rr
21.3 nC
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.