Diodes ZXMC3A17DN8 - Manual (Page 4)

ZXMC3A17DN8
S E M I C O N D U C T O R S
ISSUE 1 - OCTOBER 2005
ADVANCE INFORMATION
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown
Voltage V
(BR)DSS
30 V I
D
= 250 ␮A, V
GS
=0V
Zero Gate Voltage Drain
Current I
DSS
0.5 ␮A V
DS
=30V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-Source Threshold
Voltage V
GS(th)
1.0 V I
D
= 250 ␮A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.050
0.065
⍀
⍀ V
GS
= 10V, I
D
= 7.8A
V
GS
= 4.5V, I
D
= 6.8A
Forward
Transconductance (1) (3)
g
fs
10 S V
DS
= 10V, I
D
= 7.8A
DYNAMIC
(3)
Input Capacitance C
iss
600 pF
V
DS
= 25V, V
GS
=0V
f=1MHz
Output Capacitance C
oss
104 pF
Reverse Transfer Capacitance C
rss
58.5 pF
SWITCHING (2) (3)
Turn-On-Delay Time t
d(on)
2.9 ns
V
DD
= 15V, I
D
=3.5A
R
G
≅ 6.0⍀,
V
GS
= 10V
Rise Time t
r
6.4 ns
Turn-Off Delay Time t
d(off)
16 ns
Fall Time t
f
11.2 ns
Gate Charge Q
g
6.9 nC V
DS
= 15V, V
GS
= 5V
I
D
= 3.5A
Total Gate Charge Q
g
12.2 nC
V
DS
= 15V, V
GS
= 10V
I
D
= 3.5A
Gate-Source Charge Q
gs
1.7 nC
Gate-Drain Charge Q
gd
2.4 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.85 0.95 V T
j
=25°C, I
S
= 3.2A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
18.8 ns T
j
=25°C, I
F
= 3.5A,
di/dt=100A/ ␮s Reverse Recovery Charge (3)
Q
rr
14.1 nC
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
(1) Measured under pulsed conditions. Pulse width Յ 300ms; Duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.