Zxmc3a16dn8 – Diodes ZXMC3A16DN8 User Manual
Page 2
ZXMC3A16DN8
ISSUE 1 - OCTOBER 2005
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)(d)
R
θJA
100
°C/W
Junction to Ambient
(b)(e)
R
θJA
70
°C/W
Junction to Ambient
(b)(d)
R
θJA
60
°C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
Յ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
PARAMETER
SYMBOL
N-Channel
P-Channel
UNIT
Drain-Source Voltage
V
DSS
30
-30
V
Gate-Source Voltage
V
GS
Ϯ20
Ϯ20
V
Continuous Drain Current@V
GS
=10V; T
A
=25
ЊC
(b)(d)
@V
GS
=10V; T
A
=70
ЊC
(b)(d)
@V
GS
=10V; T
A
=25
ЊC
(a)(d)
I
D
6.4
5.1
4.9
-5.4
-4.3
-4.1
A
A
A
Pulsed Drain Current
(c)
I
DM
30
-25
A
Continuous Source Current (Body Diode)
(b)
I
S
3.4
-3.2
A
Pulsed Source Current (Body Diode)
(c)
I
SM
30
-25
A
Power Dissipation at TA=25°C
(a)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/°C
Power Dissipation at TA=25°C
(a)(e)
Linear Derating Factor
P
D
1.8
14
W
mW/°C
Power Dissipation at TA=25°C
(b)(d)
Linear Derating Factor
P
D
2.1
17
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS