Diodes ZXMP2120G4 - Manual (Page 3)

ZXMP2120G4
ISSUE 2 - SEPTEMBER 2006
3
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS
Drain-Source
Breakdown Voltage BV
DSS
-200 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage V
GS(th)
-1.5 -3.5 V I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
= Ϯ20V, V
DS
=0V
Zero Gate Voltage Drain
Current I
DSS
-10
-100
µA
µA
V
DS
=-200 V, V
GS
=0V
V
DS
=-160 V, V
GS
=0V,
T=125°C (2)
On-State Drain Current
(1)
I
D(on)
-300 mA V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
25 Ω V
GS
=-10V, I
D
=-150mA
Forward Transconductance
(1)(2)
g
fs
50 mS V
DS
=-25V, I
D
=-150mA
Input Capacitance (2) C
iss
100 pF
Common Source Output
Capacitance
(2)
C
oss
25 pF V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2) C
rss
7 pF
Turn-On Delay Time
(2)(3)
t
d(on)
7 ns
V
DD
-25V, I
D
=-150mA Rise Time (2)(3) t
r
15 ns
Turn-Off Delay Time (2)(3) t
d(off)
12 ns
Fall Time
(2)(3)
t
f
15 ns
(1) Measured under pulsed conditions. Width=300 µs. Duty cycle ®2%
(2) Sample test.
(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator