Diodes ZXMP10A17G - Manual (Page 4)

ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
4 of 8
www.diodes.com
November 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP10A17G
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
-100 ⎯ ⎯ V I
D
= -250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -0.5 μA V
DS
= -100V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(th)
-2.0 ⎯ -4.0 V I
D
= -250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 5) R
DS (ON)
⎯ ⎯
0.350
Ω
V
GS
= -10V, I
D
= -1.4A
0.450 V GS = -6V, I D = -1.2A
Forward Transconductance (Notes 5 & 6) g
fs
⎯ 2.8 ⎯ S V
DS
= -15V, I
D
= -1.4A
Diode Forward Voltage (Note 5) V
SD
⎯ -0.85 -0.95 V I
S
= -1.7A, V
GS
= 0V
Reverse recovery time (Note 6) t
rr
33 ⎯ ns
I
S
= -1.5A, di/dt = 100A/
μs
Reverse recovery charge (Note 6) Q
rr
⎯ 48 ⎯ nC
DYNAMIC CHARACTERISTICS ( Note 6 )
Input Capacitance C
iss
⎯ 424 ⎯ pF
V DS = -50V, V GS = 0V
f = 1MHz
Output Capacitance C oss
⎯ 36.6 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 29.8 ⎯ pF
Total Gate Charge (Note 7) Q
g
⎯ 7.1 ⎯ nC V
GS
= -6.0V
V
DS
= -50V
I
D
= -1.4A
Total Gate Charge (Note 7) Q
g
⎯ 10.7 ⎯ nC
V
GS
= -10V Gate-Source Charge (Note 7) Q
gs
⎯ 1.7 ⎯ nC
Gate-Drain Charge (Note 7) Q gd
⎯ 3.8 ⎯ nC
Turn-On Delay Time (Note 7) t
D(on)
⎯ 3.0 ⎯ ns
V
DD
= -50V, V
GS
= -10V
I D = -1A, R G
≅ 6.0Ω
Turn-On Rise Time (Note 7) t r
⎯ 3.5 ⎯ ns
Turn-Off Delay Time (Note 7) t
D(off)
⎯ 13.4 ⎯ ns
Turn-Off Fall Time (Note 7) t
f
⎯ 7.2 ⎯ ns
Notes: 5. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
6. For design aid only, not subject to production testing.
7. Switching characteristics are independent of operating junction temperatures.