Diodes ZVP4525E6 - Manual (Page 4)

ISSUE 1 - MARCH 2001
ZVP4525E6
4
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
-250 -285 V I
D
=-1mA, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
-30 -500 nA V
DS
=-250V, V
GS
=0V
Gate-Body Leakage I
GSS
±1 ±100 nA V
GS
=
±
40V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
-0.8 -1.5 -2.0 V I
D
=-1mA, V
DS
= V
GS
Static Drain-Source On-State Resistance (1) R
DS(on)
10
13 14
18
Ω
Ω
V
GS
=-10V, I
D
=-200mA
V
GS
=-3.5V, I
D
=-100mA
Forward Transconductance (3) g
fs
80 200 mS V
DS
=-10V,I
D
=-0.15A
DYNAMIC (3)
Input Capacitance C
iss
73 pF
V
DS
=-25 V, V
GS
=0V,
f=1MHz Output Capacitance C
oss
12.8 pF
Reverse Transfer Capacitance C
rss
3.91 pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on)
1.53 ns
V
DD
=-30V, I
D
=-200mA
R
G
=50
Ω
, V
GS
=-10V
(refer to test circuit)
Rise Time t
r
3.78 ns
Turn-Off Delay Time t
d(off)
17.5 ns
Fall Time t
f
7.85 ns
Total Gate Charge Q
g
2.45 3.45 nC
V
DS
=-25V,V
GS
=-10V,
I
D
=-200mA(refer to
test circuit)
Gate-Source Charge Q
gs
.22 .31 nC
Gate Drain Charge Q
gd
.45 .63 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
0.97 V T
j
=25°C, I
S
=-200mA,
V
GS
=0V
Reverse Recovery Time (3) t
rr
205 290 ns T
j
=25°C, I
F
=-200mA,
di/dt= 100A/
µ
s
Reverse Recovery Charge (3) Q
rr
21 29 nC
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.