Diodes ZVP4424A - Manual

P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPTEMBER 94
FEATURES
* 240 Volt V
DS
* R
DS(on)
=9 Ω
* Low threshold
APPLICATIONS
* Electronic Hook Switch
REFER TO ZVP4424A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-240 V
Continuous Drain Current at T
amb
=25°C I
D
-200 mA
Pulsed Drain Current I
DM
-1 A
Gate Source Voltage V
GS
± 40 V
Power Dissipation at T
amb
=25°C P
tot
750 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-240 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-0.7 -1.4 -2.0 V ID=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
100 nA V
GS
= ± 40V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-10
-100
µ A
µ A
V
DS
=-240 V, V
GS
=0
V
DS
=-190V, V
GS
=0V, T=125°C
On-State Drain Current I
D(on)
-0.75 -1.0 A V
DS
=-10 V, V
GS
=-10V
Static Drain-Source
On-State Resistance
R
DS(on)
7.1
8.8
9
11
Ω
Ω
V
GS
=-10V,I
D
=-200mA
V
GS
=-3.5V,I
D
=-100mA
Forward
Transconductance (1) (2)
g
fs
125 mS V
DS
=-10V,I
D
=-0.2A
Input Capacitance (2) C
iss
100 200 pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Common Source Output
Capacitance (2)
C
oss
18 25 pF
Reverse Transfer
Capacitance (2)
C
rss
5 15 pF
Turn-On Delay Time (2)(3) t
d(on)
8 15 ns
V
DD
≈− 50V, I
D
=-0.25A,
V
GEN
=-10V
Rise Time (2)(3) t
r
8 15 ns
Turn-Off Delay Time (2)(3) t
d(off)
26 40 ns
Fall Time (2)(3) t
f
20 30 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
3-439
ZVP4424C
3-436
G
D
S
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPTEMBER 94
FEATURES
* 240 Volt V
DS
* R
DS(on)
=9 Ω
* Low threshold
APPLICATIONS
* Electronic Hook Switch
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-240 V
Continuous Drain Current at T
amb
=25°C I
D
-200 mA
Pulsed Drain Current I
DM
-1 A
Gate Source Voltage V
GS
± 40 V
Power Dissipation at T
amb
=25°C P
tot
750 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-240 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-0.7 -1.4 -2.0 V ID=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
100 nA V
GS
= ± 40V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-10
-100
µ A
µ A
V
DS
=-240 V, V
GS
=0
V
DS
=-190V, V
GS
=0V, T=125°C
On-State Drain Current I
D(on)
-0.75 -1.0 A V
DS
=-10 V, V
GS
=-10V
Static Drain-Source
On-State Resistance
R
DS(on)
7.1
8.8
9
11
Ω
Ω
V
GS
=-10V,I
D
=-200mA
V
GS
=-3.5V,I
D
=-100mA
Forward
Transconductance (1) (2)
g
fs
125 mS V
DS
=-10V,I
D
=-0.2A
Input Capacitance (2) C
iss
100 200 pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Common Source Output
Capacitance (2)
C
oss
18 25 pF
Reverse Transfer
Capacitance (2)
C
rss
5 15 pF
Turn-On Delay Time (2)(3) t
d(on)
8 15 ns
V
DD
≈− 50V, I
D
=-0.25A,
V
GEN
=-10V
Rise Time (2)(3) t
r
8 15 ns
Turn-Off Delay Time (2)(3) t
d(off)
26 40 ns
Fall Time (2)(3) t
f
20 30 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVP4424A
D
G
S