Diodes ZVP3310A - Manual (Page 2)

P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
=20 Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-100 V
Continuous Drain Current at T
amb
=25°C I
D
-140 mA
Pulsed Drain Current I
DM
-1.2 A
Gate Source Voltage V
GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
625 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-100 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5 -3.5 V ID=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-1
-50
µ A
µ A
V
DS
=-100V, V
GS
=0
V
DS
=-80V, V
GS
=0V, T=125°C (2)
On-State Drain Current(1) I
D(on)
-300 mA V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
20 Ω V
GS
=-10V,I
D
=-150mA
Forward Transconductance
(1)(2)
g
fs
50 mS V
DS
=-25V,I
D
=-150mA
Input Capacitance (2) C
iss
50 pF
Common Source Output
Capacitance (2)
C
oss
15 pF V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5 pF
Turn-On Delay Time (2)(3) t
d(on)
8 ns
V
DD
≈ -25V, I
D
=-150mA
Rise Time (2)(3) t
r
8 ns
Turn-Off Delay Time (2)(3) t
d(off)
8 ns
Fall Time (2)(3) t
f
8 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2%
(2) Sample test.
(
3
)
Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVP3310A
3-432
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
V DS - Drain Source Voltage (Volts)
Transfer Characteristics
-2 -4 -6 -8 -10 0 -10 -20 -30 -40 -50
Saturation Characteristics
V DS-
Drain Source
V
oltage (V
olts)
Voltage Saturation Characteristics
V GS- Gate Source Voltage (Volts) V GS- Gate Source Voltage (Volts)
0 0
V DS - Drain Source Voltage (Volts)
0 -2 -4 -6 -8 -10
-0.6
-0.4
0
-0.2
I D
- D
ra
in C
u
rr
e
nt
(Amp
s)
V DS=
-10V
0
-10
-6
-2
-4
-8
0 -2 -4 -6 -8 -10
I D=
-0.3A
-0.15A
-0.075A
I D
- D
ra
in C
u
rr
e
nt
(Amp
s)
-5V
-4V
-0.6
-0.4
-0.2
-10V
-8V
-6V
-9V
-7V
-4.5V
-3.5V
V GS= -20V
-12V
-16V
I D
- Drain Current (Amps)
-5V
-4V
-0.6
-0.4
-0.2
-10V
-8V
-6V
-9V
-7V
V GS=
-20V
-12V
-16V
-14V
On-resistance v drain current
I D- Drain Current (mA)
R
DS
(on)
-D
rain So
u
rce
On
R
e
s
ista
n
c e
(
Ω )
10
-10 -100 -1000
-20V
100
-5V -6V -7V V GS =-4V -8V -10V
50
Normalised R DS(on) and V GS(th) v Temperature
T j -Junction Temperature (°C)
No
rmalis
e
d R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120 100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Dr
ai n- So
urc
e R
es
ista
nc e R DS(
on )
Gate Threshold V
oltage V
GS(TH)
I D= -150mA
V GS= -10V
I D= -1mA
V GS= V DS
2.6
180
ZVP3310A
3-433