Diodes ZVP2120G - Manual (Page 3)

TYPICAL CHARACTERISTICS
Output Characteristics
V DS - Drain Source Voltage (Volts)
I D(O
n )
-On-State Drain Current (Amps)
Transfer Characteristics
Normalised R DS(on) and V GS(th) vs Temperature
No
rma
lis
e
d
R
DS(on)
and V
G
S(
th)
-40 -20 0 20 40 60 80 120 100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
urc
e R
es
ista
nc
e R DS(
on
)
Gate Threshold Vo
ltage V GS(th)
I D=- 0.1A
0 -2 -4 -6 -8 -10 0 -20 -40 -60 -80 -100
Saturation Characteristics
-14
-12
-10
-6
-2
0
-4
-8
-16
-18
0 -2 -4 -6 -8 -10
-20
V DS-
Dr
ai
n S
o
u
rc
e
V
o
ltage (
V
ol
ts
)
Voltage Saturation Characteristics
V GS- Gate Source Voltage (Volts)
-5V
-4V
-10V
-5V
I D=
- 300mA
-200mA
-100mA
I D(
O
n )-
On-State Drain Current (Amps)
V GS- Gate Source Voltage (Volts)
V GS= -10V
I D= -1mA
V GS= V DS
-0.6
-0.4
0
-0.2
2.6
180
V GS=
-10V
-7V
-4.5V
-6V
-7V
-4V
-3.5V
-8V
V GS =
-8V
I D(O
n )
-On-State Drain Current (Amps)
V DS - Drain Source Voltage (Volts)
On-resistance vs gate-source voltage
V GS -Gate Source Voltage (Volts)
R
DS(
O
N
)
-D
ra
in So
urc
e
Res
is
ta
n
c
e
(
Ω )
-1 -10
100
50
-20
I D=
-300mA
-200mA
-I00mA
-6V
-4.5V
-3.5V
-0.4
-0.3
-0.1
0
-0.2
-50mA
0 -2 -4 -6 -8 -10
-10V
-0.6
-0.4
0
-0.2
V DS=
-25V
-50mA
10
T-Temperature (°C)
TYPICAL CHARACTERISTICS
Transconductance v drain current
I D - Drain Current (Amps )
g fs
-T
rans
c
o
n
ductance (
m
S)
0 -0.2 -0.4 -0.6 -0.8
0
Q-Charge (nC)
0
V DS= -25V
Transconductance v gate-source voltage
V GS -Gate Source Voltage (Volts)
g fs
-T
ransconductance (mS)
0
0 -2 -4 -6 -8 -10
V DS= -25V
0 -10 -20 -30
V DS -Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-
Ca
pa
c ita
nce
(
pF)
C oss
V GS
-Ga
te
So
ur
ce V
o
lta
ge
(
V
olts)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
V DS =
-50V
I D=- 0.4A
-100V -180V
-40 -50 0.2 0.4 0.6 0.8 1.0 1.2
80
60
40
20
100
180
160
140
120
200
80
60
40
20
100
180
160
140
120
200
40
20
60
C iss
C rss
80
100
1.4 1.6 1.8 2.0 2.2 2.4
ZVP2120G ZVP2120G
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