Diodes ZVP2110G - Manual

SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94 ✪
FEATURES
* 100 Volt V
DS
* R
DS(on)
=8 Ω
COMPLEMENTARY TYPE – ZVN2110G
PARTMARKING DETAIL – ZVP2110
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-100 V
Continuous Drain Current at T
amb
=25°C I
D
-310 mA
Pulsed Drain Current I
DM
-3 A
Gate Source Voltage V
GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
2 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-100 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5 -3.5 V ID=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-1
-100
µ A
µ A
V
DS
=-100 V, V
GS
=0
V
DS
=-80 V, V
GS
=0V, T=125°C (2)
On-State Drain Current(1) I
D(on)
-750 mA V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
8 Ω V
GS
=-10V,I
D
=-375mA
Forward Transconductance
(1)(2)
g
fs
125 mS V
DS
=-25V,I
D
=-375mA
Input Capacitance (2) C
iss
100 pF
Common Source Output
Capacitance (2)
C
oss
35 pF V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
10 pF
Turn-On Delay Time (2)(3) t
d(on)
7 ns
V
DD
≈ -25V, I
D
=-375mA
Rise Time (2)(3) t
r
15 ns
Turn-Off Delay Time (2)(3) t
d(off)
12 ns
Fall Time (2)(3) t
f
15 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2% (2) Sample test.
3 - 429 3 - 430
ZVP2110G ZVP2110G
0 0.5 1.0 1.5
Q-Gate Charge (nC)
40
20
0
60
0 -20 -40 -60
V DS -Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C
-C
apaci
ta
nce (
pF)
C iss
C oss
C rss
V
/
5
-G
ate
S
ource V
ol
tag
e (
Vol
ts)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
V DS =
-25V
I D=- 0.5A
-50V -100V
80
-80 -100 2.0 2.5 3.0
TYPICAL CHARACTERISTICS
Normalised R DS(on) and V GS(th) vs Temperature
N
or
m
al
ised
R
and V
-40 -20 0 20 40 60 80 120 100 140 160
I D= -0.375A
0 -2 -4 -6 -8 -10
Saturation Characteristics
On-resistance v drain current
I D- Drain Current (mA)
R
-Dr
ai
n S
our
ce O
n R
es
istan
ce
Ω
-5V
-7V
-16V
-9V
V GS= -10V
I D= -1mA
V GS= V DS
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
2.6
180
10
1
100
10 100 1000
V GS =-4V
-10V
-20V
-6V
-7V
-8V
-10V
-5V
-4.5V
-12V
V GS =
I
- Dr
ai
n Curr
ent (A
m
ps)
V DS - Drain Source Voltage (Volts)
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.2
0
-0.4
-20V
-4V
-3.5V
Junction Temperature (°C)
Transconductance v gate-source voltage
V GS -Gate Source Voltage (Volts)
g BI
-T
ran
sc
onductan
ce (
m
S)
0 -2 -4 -6 -8 -10
200
150
100
0
50
250
V DS= -10V
D
D
S
G