Diodes ZVP2110A - Manual

P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
=8 Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-100 V
Continuous Drain Current at T amb =25°C I D -230 mA
Pulsed Drain Current I
DM
-3 A
Gate Source Voltage V GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BV
DSS
-100 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage V GS(th) -1.5 -3.5 V ID=-1mA, V DS = V GS
Gate-Body Leakage I
GSS
20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current I
DSS
-1
-100 µ A
µ A
V
DS
=-100 V, V
GS
=0
V
DS
=-80 V, V
GS
=0V, T=125°C (2)
On-State Drain Current(1) I
D(on)
-750 mA V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1) R
DS(on)
8 Ω V
GS
=-10V,I
D
=-375mA
Forward Transconductance
(1)(2) g
fs
125 mS V
DS
=-25V,I
D
=-375mA
Input Capacitance (2) C
iss
100 pF
Common Source Output
Capacitance (2) C oss 35 pF V DS =-25V, V GS =0V, f=1MHz
Reverse Transfer
Capacitance (2) C
rss
10 pF
Turn-On Delay Time (2)(3) t
d(on)
7 ns
V
DD
≈ -25V, I
D
=-375mA
Rise Time (2)(3) t
r
15 ns
Turn-Off Delay Time (2)(3) t
d(off)
12 ns
Fall Time (2)(3) t
f
15 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2%
(2) Sample test.
(
3
)
Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
3-421
D
G
S
3-424
G
D
S
ZVP2110A
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
=8 Ω
REFER TO ZVP2110A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-100 V
Continuous Drain Current at T
amb
=25°C I
D
-230 mA
Pulsed Drain Current I
DM
-3 A
Gate Source Voltage V
GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BV
DSS
-100 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage V
GS(th)
-1.5 -3.5 V ID=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V GS = ± 20V, V DS =0V
Zero Gate Voltage Drain
Current I
DSS
-1
-100 µ A
µ A
V
DS
=-100 V, V
GS
=0
V
DS
=-80 V, V
GS
=0V, T=125°C (2)
On-State Drain Current(1) I
D(on)
-750 mA V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1) R
DS(on)
8 Ω V
GS
=-10V,I
D
=-375mA
Forward Transconductance
(1)(2) g fs 125 mS V DS =-25V,I D =-375mA
Input Capacitance (2) C
iss
100 pF
Common Source Output
Capacitance (2) C
oss
35 pF V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2) C
rss
10 pF
Turn-On Delay Time (2)(3) t
d(on)
7 ns
V
DD
≈ -25V, I
D
=-375mA
Rise Time (2)(3) t
r
15 ns
Turn-Off Delay Time (2)(3) t
d(off)
12 ns
Fall Time (2)(3) t
f
15 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2%
(2) Sample test.
E-Line
TO92 Compatible
ZVP2110C