beautypg.com

Diodes ZVP0545G User Manual

Zvp0545g, Absolute maximum ratings, Electrical characteristics (at t

background image

SOT223 P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 1 – MARCH 98

FEATURES

*

450 Volt V

DS

*

R

DS(on)

=150

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Drain-Source Voltage

V

DS

-450

V

Continuous Drain Current at T

amb

=25°C

I

D

-75

mA

Pulsed Drain Current

I

DM

-400

mA

Gate Source Voltage

V

GS

±

20

V

Power Dissipation at T

amb

=25°C

P

tot

2

W

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

MAX. UNIT CONDITIONS.

Drain-Source Breakdown
Voltage

BV

DSS

-450

V

I

D

=-1mA, V

GS

=0V

Gate-Source Threshold
Voltage

V

GS(th)

-1.5

-4.5

V

I

D

=-1mA, V

DS

= V

GS

Gate-Body Leakage

I

GSS

20

nA

V

GS

=

±

20V, V

DS

=0V

Zero Gate Voltage Drain
Current

I

DSS

-20
-2

µ

A

mA

V

DS

=-450 V, V

GS

=0

V

DS

=-360 V, V

GS

=0V,

T=125°C

(2)

On-State Drain Current(1)

I

D(on)

-100

mA

V

DS

=-25 V, V

GS

=-10V

Static Drain-Source
On-State Resistance (1)

R

DS(on)

150

V

GS

=-10V,I

D

=-50mA

Forward Transconductance
(1)(2)

g

fs

40

mS

V

DS

=-25V,I

D

=-50mA

Input Capacitance (2)

C

iss

120

pF

Common Source Output
Capacitance (2)

C

oss

20

pF

V

DS

=-25 V, V

GS

=0V, f=1MHz

Reverse Transfer
Capacitance (2)

C

rss

5

pF

Turn-On Delay Time (2)(3)

t

d(on)

10

ns

V

DD

-25V, I

D

=-50mA

Rise Time (2)(3)

t

r

15

ns

Turn-Off Delay Time (2)(3)

t

d(off)

15

ns

Fall Time (2)(3)

t

f

20

ns

(1) Measured under pulsed conditions. Width=300

µ

s. Duty cycle

2%

(2) Sample test.
(3) Switching times measured with 50

source impedance and <5ns rise time on a pulse generator

ZVP0545G

D

D

S

G