Diodes ZVP0545G - Manual

SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – MARCH 98
FEATURES
* 450 Volt V
DS
* R
DS(on)
=150
Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-450 V
Continuous Drain Current at T
amb
=25°C I
D
-75 mA
Pulsed Drain Current I
DM
-400 mA
Gate Source Voltage V
GS
±
20 V
Power Dissipation at T
amb
=25°C P
tot
2 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BV
DSS
-450 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage V
GS(th)
-1.5 -4.5 V I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage Drain
Current I
DSS
-20
-2
µ
A
mA
V
DS
=-450 V, V
GS
=0
V
DS
=-360 V, V
GS
=0V,
T=125°C (2)
On-State Drain Current(1) I
D(on)
-100 mA V
DS
=-25 V, V
GS
=-10V
Static Drain-Source
On-State Resistance (1) R
DS(on)
150
Ω
V
GS
=-10V,I
D
=-50mA
Forward Transconductance
(1)(2) g
fs
40 mS V
DS
=-25V,I
D
=-50mA
Input Capacitance (2) C
iss
120 pF
Common Source Output
Capacitance (2) C
oss
20 pF V
DS
=-25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2) C
rss
5 pF
Turn-On Delay Time (2)(3) t
d(on)
10 ns
V
DD
≈
-25V, I
D
=-50mA
Rise Time (2)(3) t
r
15 ns
Turn-Off Delay Time (2)(3) t
d(off)
15 ns
Fall Time (2)(3) t
f
20 ns
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2%
(2) Sample test.
(3) Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator
ZVP0545G
D
D
S
G