Zxmp6a18k, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXMP6A18K User Manual
Page 4
ZXMP6A18K
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
A
= 25°C unless otherwise stated)
Parameter Symbol
Min.
Typ. Max. Unit
Conditions
Static
Drain-source breakdown voltage V
(BR)DSS
-60 V
I
D
=-250
A, V
GS
=0V
Zero gate voltage drain current
I
DSS
-1.0 µA
V
DS
=-60V, V
GS
=0V
Gate-body leakage
I
GSS
100 nA
V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage
V
GS(th)
-1.0
V
I
D
=-250
A, V
DS
=V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Width
Յ
300µs. Duty cycle
Յ
2%.
R
DS(on)
0.055
⍀
V
GS
=-10V, I
D
=-3.5A
0.080
V
GS
=-4.5V, I
D
=-2.9A
Forward transconductance
gfs
8.7 S
V
DS
=-15V,I
D
=-3.5A
Input capacitance
C
iss
1580
pF
V
DS
=-30 V, V
GS
=0V,
f=1MHz
Output capacitance
C
oss
160 pF
Reverse transfer capacitance
C
rss
140 pF
Switching
(†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on delay time
t
d(on)
4.6
ns
V
DD
=-30V, I
D
=-1A
R
G
=6.0W,V
GS
=-10V
Rise time
t
r
5.8 ns
Turn-off delay time
t
d(off)
55 ns
Fall time
t
f
23 ns
Gate charge
Q
g
23
nC
V
DS
=-30V,V
GS
=-5V,
I
D
=-3.5A
Total gate charge
Q
g
44 nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-3.5A
Gate-source charge
Q
gs
3.9 nC
Gate-drain charge
Q
gd
9.8 nC
Source-drain diode
Diode forward voltage
V
SD
-0.85
-0.95
V
T
J
=25°C, I
S
=-4.2A,
V
GS
=0V
Reverse recovery time
t
rr
37
ns
T
J
=25°C, I
F
=-2.1A,
di/dt= 100A/µs
Reverse recovery charge
Q
rr
56 nC