Diodes ZXMP6A17N8 - Manual (Page 4)

ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
4 of 8
www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A17N8
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-60 ⎯ ⎯ V I
D
= -250 μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -0.5 μA V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V GS(th)
-1.0 ⎯ ⎯ V I D = -250
μA, V
DS = V GS
Static Drain-Source On-Resistance (Note 6) R
DS (ON)
⎯ ⎯
0.125
Ω
V
GS
= -10V, I
D
= -2.3A
0.190 V
GS
= -4.5V, I
D
= -1.9A
Forward Transconductance (Notes 6 & 7) g
fs
⎯ 4.7 ⎯ S V
DS
= -15V, I
D
= -2.3A
Diode Forward Voltage (Note 6) V
SD
⎯ -0.85 -0.95 V I
S
= -2.0A, V
GS
= 0V
Reverse recovery time (Note 7) t
rr
25.1 ⎯ ns
I S = -1.7A, di/dt = 100A/
μs
Reverse recovery charge (Note 7) Q
rr
⎯ 27.2 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
⎯ 637 ⎯ pF
V
DS
= -30V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
⎯ 70 ⎯ pF
Reverse Transfer Capacitance C rss
⎯ 53 ⎯ pF
Total Gate Charge (Note 8) Q
g
⎯ 9.0 ⎯ nC V
GS
= -4.5V
V
DS
= -30V
I
D
= -2.2A
Total Gate Charge (Note 8) Q
g
⎯ 17.7 ⎯ nC
V GS = -10V Gate-Source Charge (Note 8) Q gs
⎯ 1.6 ⎯ nC
Gate-Drain Charge (Note 8) Q
gd
⎯ 4.4 ⎯ nC
Turn-On Delay Time (Note 8) t
D(on)
⎯ 2.6 ⎯ ns
V
DD
= -30V, V
GS
= -10V
I
D
= -1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 8) t r
⎯ 3.4 ⎯ ns
Turn-Off Delay Time (Note 8) t
D(off)
⎯ 26.2 ⎯ ns
Turn-Off Fall Time (Note 8) t
f
⎯ 11.3 ⎯ ns
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperatures.