Diodes ZVP3306A User Manual
Zvp3306a, P-channel enhancement mode vertical dmos fet, Typical characteristics

P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 60 Volt V
DS
* R
DS(on)
=14
Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-60
V
Continuous Drain Current at T
amb
=25°C
I
D
-160
mA
Pulsed Drain Current
I
DM
-1.6
A
Gate Source Voltage
V
GS
±
20
V
Power Dissipation at T
amb
=25°C
P
tot
625
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-60
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
ID=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-0.5
-50
µ
A
µ
A
V
DS
=-60 V, V
GS
=0
V
DS
=-48 V, V
GS
=0V, T=125°C
(2)
On-State Drain Current(1)
I
D(on)
-400
mA
V
DS
=-18 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
14
Ω
V
GS
=-10V,I
D
=-200mA
Forward Transconductance
(1)(2)
g
fs
60
mS
V
DS
=-18V,I
D
=-200mA
Input Capacitance (2)
C
iss
50
pF
Common Source Output
Capacitance (2)
C
oss
25
pF
V
DS
=-18V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
8
pF
Turn-On Delay Time (2)(3)
t
d(on)
8
ns
V
DD
≈
-18V, I
D
=-200mA
Rise Time (2)(3)
t
r
8
ns
Turn-Off Delay Time (2)(3)
t
d(off)
8
ns
Fall Time (2)(3)
t
f
8
ns
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2%
(2) Sample test.
(
3
)
Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVP3306A
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
I
D
- D
ra
in
C
u
rr
e
nt (Amp
s
)
-0.8
-0.6
-0.4
0
-0.2
-1.0
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Junction Temperature (°C)
Nor
m
ali
s
e
d
R
DS(on)
a
nd V
G
S(
th
)
-40 -20
0
20 40 60 80
120
100
140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Dr
ai
n-
So
urc
e R
es
ista
nc
e
R
DS(
on
)
Gate Threshold Vo
ltage V
GS(TH)
I
D=
0.37A
0
-2
-4
-6
-8
-10
-1.0
-0.8
-0.6
-0.4
0
-0.2
0
-10
-20
-30
-40
-50
Saturation Characteristics
On-resistance vs Drain Current
I
D-
Drain Current
(mA)
-6
0
-2
-4
-8
0
-2
-4
-6
-8
-10
-10
V
DS-
Dra
in
Source
V
o
lt
ag
e (
V
ol
ts
)
R
D
S(on
)-
D
rain
So
ur
ce
O
n
R
e
sistan
ce
(
Ω
)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
-0.6
0
-0.2
-0.4
-0.8
0
-2
-4
-6
-8
-10
-1.0
V
GS=
-20V
-16V
-6V
-7V
-8V
-5V
-4V
-16V
-9V
I
D=
-
400mA
-200mA
-100mA
V
DS=-
10V
V
GS-
Gate Source
Voltage (Volts)
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
-1.2
-10V
-9V
-10V
-6V
2.6
180
10
1
100
-10
-100
-1000
V
GS
=-5V
V
GS=
-20V
-15V
-20V
-7V
-6V
-7V
-8V
-10V
-12V
-5V
-4.5V
-14V
V
GS
=
-14V
-12V
I
D
- Drain Curre
n
t (
A
mps)
V
DS
- Drain Source
Voltage (Volts)
I
D(
O
n
)-
On-Sta
te D
rain
C
urrent (Amp
s
)
ZVP3306A
3-429
3-430