Diodes ZVP3306F - Manual

D
SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
FEATURES
* 60 Volt V
DS
* R
DS(on)
=14 Ω
PARTMARKING DETAIL – ML
COMPLEMENTARY TYPE – ZVN3306F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-60 V
Continuous Drain Current at T
amb
=25°C I
D
-90 mA
Pulsed Drain Current I
DM
-1.6 A
Gate Source Voltage V
GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
-60 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5 -3.5 V I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-0.5
-50
µ A
µ A
V
DS
=-60 V, V
GS
=0V
V
DS
=-48 V, V
GS
=0V, T=125°C (2)
On-State Drain Current(1) I
D(on)
-400 mA V
DS
=-18 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
14 Ω V
GS
=-10V, I
D
=-200mA
Forward Transconductance
(1)(2)
g
fs
60 mS V
DS
=-18V, I
D
=-200mA
Input Capacitance (2) C
iss
50 pF
Common Source Output
Capacitance (2)
C
oss
25 pF V
DS
=-18V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2) C
rss
8 pF
Turn-On Delay Time (2)(3) t
d(on)
8 ns
V
DD
≈ -18V, I
D
=-200mA
Rise Time (2)(3) t
r
8 ns
Turn-Off Delay Time (2)(3) t
d(off)
8 ns
Fall Time (2)(3) t
f
8 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVP3306F
TYPICAL CHARACTERISTICS
Normalised R DS(on) and V GS(th) vs Temperature
Junction Temperature (°C)
Norm
al
ised R
an
d V
-40 -20 0 20 40 60 80 120 100 140 160
2.0
1.0
0.6
I D= 0.37A
0 -2 -4 -6 -8 -10
-1.0
-0.8
-0.6
-0.4
0
-0.2
Saturation Characteristics
On-resistance vs Drain Current
I D- Drain Current (mA)
RDS(on)
-D
rai
n S
ou
rce O
n
R
es
istan
ce
Ω
-6V
-7V
-16V
-9V
V GS= -10V
I D= -1mA
V GS= V DS
-10V
-6
0
-2
-4
-8
0 -2 -4 -6 -8 -10
-10
V
D
ra
in
So
ur
ce
Voltage Saturation Characteristics
V GS- Gate Source Voltage (Volts)
I D=
-400mA
-200mA
-100mA
2.6
180
10
1
100
-10 -100 -1000
V GS =-5V
-15V
-20V
-6V
-7V
-8V
-10V
-12V
-5V
-4.5V
-14V
V GS =
I
- Dr
ai
n
C
urr
ent (A
m
ps)
V DS - Drain Source Voltage (Volts)
-6
-8
-10
-14
-16
-12
-4
-2
0 0.5 1.0 1.5
0
Q-Gate Charge (nC)
40
30
20
0
10
50
60
0 -10 -20 -30 -40 -50 -60 -70
V DS -Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-
Cap
acit
ance (pF)
Note:V GS= 0V
f=1MHz
C iss
C oss
C rss
V
/
5
-G
ate
S
ource V
ol
tag
e (
Vol
ts) 1
2
Gate charge v gate-source voltage
V DS =
-20V
Note:I D=- 0.2A
-40V -60V
ZVP3306F
G
S
SOT23
3 -434 3 - 435