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Diodes ZVP3306F User Manual

Zvp3306f, Sot23 p-channel enhancement mode vertical dmos fet, Typical characteristics

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D

SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET

ISSUE 3 – JANUARY 1996
FEATURES
* 60 Volt V

DS

* R

DS(on)

=14

PARTMARKING DETAIL – ML
COMPLEMENTARY TYPE – ZVN3306F

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Drain-Source Voltage

V

DS

-60

V

Continuous Drain Current at T

amb

=25°C

I

D

-90

mA

Pulsed Drain Current

I

DM

-1.6

A

Gate Source Voltage

V

GS

±

20

V

Power Dissipation at T

amb

=25°C

P

tot

330

mW

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source

Breakdown Voltage

BV

DSS

-60

V

I

D

=-1mA, V

GS

=0V

Gate-Source Threshold

Voltage

V

GS(th)

-1.5

-3.5

V

I

D

=-1mA, V

DS

= V

GS

Gate-Body Leakage

I

GSS

20

nA

V

GS

=

±

20V, V

DS

=0V

Zero Gate Voltage Drain

Current

I

DSS

-0.5

-50

µ

A

µ

A

V

DS

=-60 V, V

GS

=0V

V

DS

=-48 V, V

GS

=0V, T=125°C

(2)

On-State Drain Current(1)

I

D(on)

-400

mA

V

DS

=-18 V, V

GS

=-10V

Static Drain-Source On-State

Resistance (1)

R

DS(on)

14

V

GS

=-10V, I

D

=-200mA

Forward Transconductance

(1)(2)

g

fs

60

mS

V

DS

=-18V, I

D

=-200mA

Input Capacitance (2)

C

iss

50

pF

Common Source Output

Capacitance (2)

C

oss

25

pF

V

DS

=-18V, V

GS

=0V, f=1MHz

Reverse Transfer Capacitance (2) C

rss

8

pF

Turn-On Delay Time (2)(3)

t

d(on)

8

ns

V

DD

-18V, I

D

=-200mA

Rise Time (2)(3)

t

r

8

ns

Turn-Off Delay Time (2)(3)

t

d(off)

8

ns

Fall Time (2)(3)

t

f

8

ns

(1) Measured under pulsed conditions. Width=300

µ

s. Duty cycle

2% (2) Sample test.

(3) Switching times measured with 50

source impedance and <5ns rise time on a pulse generator

Spice parameter data is available upon request for this device

ZVP3306F

TYPICAL CHARACTERISTICS

Normalised R

DS(on)

and V

GS(th)

vs Temperature

Junction Temperature (°C)

Norm

al

ised R

an

d V

-40 -20 0 20 40 60 80

120

100

140 160

2.0

1.0

0.6

I

D=

0.37A

0

-2

-4

-6

-8

-10

-1.0

-0.8

-0.6

-0.4

0

-0.2

Saturation Characteristics

On-resistance vs Drain Current

I

D-

Drain Current (mA)

RDS(on)

-D

rai

n S

ou

rce O

n

R

es

istan

ce

-6V

-7V

-16V

-9V

V

GS=

-10V

I

D=

-1mA

V

GS=

V

DS

-10V

-6

0

-2

-4

-8

0

-2

-4

-6

-8

-10

-10

V

D

ra

in

So

ur

ce

Voltage Saturation Characteristics

V

GS-

Gate Source Voltage

(Volts)

I

D=

-400mA

-200mA

-100mA

2.6

180

10

1

100

-10

-100

-1000

V

GS

=-5V

-15V

-20V

-6V

-7V

-8V

-10V

-12V

-5V

-4.5V

-14V

V

GS

=

I

- Dr

ai

n

C

urr

ent (A

m

ps)

V

DS

- Drain Source

Voltage (Volts)

-6
-8

-10

-14
-16

-12

-4

-2

0

0.5

1.0

1.5

0

Q-Gate Charge (nC)

40

30

20

0

10

50

60

0

-10

-20

-30

-40

-50

-60

-70

V

DS

-Drain Source Voltage (Volts)

Capacitance v drain-source voltage

C-

Cap

acit

ance (pF)

Note:V

GS=

0V

f=1MHz

C

iss

C

oss

C

rss

V

/

5

-G

ate

S

ource V

ol

tag

e (

Vol

ts)

1

2

Gate charge v gate-source voltage

V

DS

=

-20V

Note:I

D=-

0.2A

-40V -60V

ZVP3306F

G

S

SOT23

3 -434

3 - 435