Diodes ZVP2106G - Manual (Page 2)

ZVP2106G
Document number: DS33393 Rev. 4 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
ZVP2106G
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DS
-60 V
Gate Source Voltage V
GS
± 20 V
Continuous Drain Current I
D
-450 M A
Pulsed Drain Current I
DM
-4 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Power Dissipation P
TOT
2 W
Storage Temperature Range T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Static Characteristics
Drain-Source Breakdown Voltage
BV
DSS
-60 — — V I
D
= -1mA, V
GS
= 0V
Gate-Source Threshold Voltage V
GS(th)
-1.5 — -3.5 V I
D
= -1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
— — 20 nA V
GS
= ±20V, V
DS
= 0V
Zero Gate Voltage Drain Current I
DSS
— —
-0.5 µA V
DS
= -60V, V
GS
= 0V
-100 µA
V
DS
= -48V, V
GS
= 0V,
T= +125 °C (Note 6)
On-State Drain Current (Note 5) I
D(on)
-1 — — A V
DS
= -18V, V
GS
= -10V
Static Drain-Source On-State Resistance (Note 5) R
DS(on)
— — 5 Ω V
GS
= -10V, I
D
= -500mA
Forward Transconductance (Note 5 & 6) g
fS
150 — — mS V
DS
= -18V, I
D
= -500mA
Dynamic Characteristics (Note 6)
Input Capacitance
C
iss
— — 100
pF V
DS
= -18V, V
GS
= 0V, f=1MHz Common Source Output Capacitance C
oss
— — 60
Reverse Transfer Capacitance C
rss
— — 20
Turn-On Delay Time (Note 7) t
d(on)
— — 7
ns V
DD
= -18V, I
D
= -500mA
Rise Time (Note 7) t
r
— — 5
Turn-Off Delay Time (Note 7) t
d(off)
— — 12
Fall Time (Note 7) f
f
— — 15
Notes: 5. Measured under pulsed conditions. Width=300µ s . Duty cycle ≦ 2%.
6. Sample test.
7. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.