Diodes ZVP2106A - Manual

P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 60 Volt V
DS
* R
DS(on)
=5 Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-60 V
Continuous Drain Current at T amb =25°C I D -280 mA
Pulsed Drain Current I
DM
-4 A
Gate Source Voltage V GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BV
DSS
-60 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage V GS(th) -1.5 -3.5 V ID=-1mA, V DS = V GS
Gate-Body Leakage I
GSS
20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current I
DSS
-0.5
-100 µ A
µ A
V
DS
=-60 V, V
GS
=0
V
DS
=-48 V, V
GS
=0V, T=125°C (2)
On-State Drain Current(1) I
D(on)
-1 A V
DS
=-18 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1) R
DS(on)
5 Ω V
GS
=-10V,I
D
=-500mA
Forward Transconductance
(1)(2) g
fs
150 mS V
DS
=-18V,I
D
=-500mA
Input Capacitance (2) C
iss
100 pF
Common Source Output
Capacitance (2) C oss 60 pF V DS =-18V, V GS =0V, f=1MHz
Reverse Transfer
Capacitance (2) C
rss
20 pF
Turn-On Delay Time (2)(3) t
d(on)
7 ns
V
DD
≈ -18V, I
D
=-500mA
Rise Time (2)(3) t
r
15 ns
Turn-Off Delay Time (2)(3) t
d(off)
12 ns
Fall Time (2)(3) t
f
15 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2%
(2) Sample test.
(
3
)
Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVP2106A
3-417
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
V DS - Drain Source Voltage (Volts)
I
D(
O
n
)
-On-
St
a
te
Dr
ain
Cu
rr
e
n
t (
Am
ps)
Transfer Characteristics
Normalised R DS(on) and V GS(th) vs Temperature
Normalised R
D
S
(o
n)
a
nd
V
G
S
(th)
-40 -20 0 20 40 60 80 120 100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Dr
ai n-
So
urc
e R
es
ista
nc
e R DS(
on
)
Gate Threshold Vo
ltage V
GS(th)
I D=- 0.5A
0 -2 -4 -6 -8 -10 0 -10 -20 -30 -40 -50
Saturation Characteristics
V
DS-
D
ra
in
S
ourc
e
V
olt
age (V
o
lt
s )
Voltage Saturation Characteristics
V GS- Gate Source Voltage (Volts)
-10V
I D(
O
n
)-
On-State Drain Current (Amps)
V GS- Gate Source Voltage (Volts)
V GS= -10V
I D= -1mA
V GS= V DS
-3.5
-3.0
-2.0
-0.5
0
-1.0
-2.5
-1.5
2.6
180
V GS=
-20V
-14V
-5V
-6V
-7V
-4V
-3.5V
-8V
V GS = -18V
I D(O
n
)
-On-State Drain Current (Amps)
V DS - Drain Source Voltage (Volts)
On-resistance v drain current
I D -Drain Current (Amps)
R
DS(ON)
-D
ra
in
So
u
rce
Re
sist
a
n
ce
(
Ω
)
-0.1 -1.0
10
5
-2.0
-12V
-6V
-4V
0 -2 -4 -6 -8 -10
1
-10V
-9V
-8V
-7V
-5V
-9V
0
-0.6
-0.4
-0.2
-0.8
-1.6
-1.4
-1.2
-1.0
-1.8
-2.0
0
-10
-6
-2
-4
-8
0 -2 -4 -6 -8 -10
I D=
-1A
-0.5A
-0.25A
-0.8
-0.6
-0.2
-0.4
V DS= -10V
-1.6
-1.4
-1.0
-1.2
-6V -7V V GS =-5V -8V -10V -9V
T j -Junction Temperature (°C)
ZVP2106A
3-418