Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes ZXM62P03E6 User Manual
Page 2
ZXM62P03E6
Document Number: DS33483 Rev. 2 - 2
2 of 7
December 2013
© Diodes Incorporated
ZXM62P03E6
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
-30
V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current
V
GS
= -4.5V
T
A
= +25°C (Note 5)
T
A
= +70°C (Note 5)
I
D
-1.5
-1.2
A
Pulsed Drain Current (Note 7)
I
DM
-7.4
A
Continuous Source Current (Body Diode)
I
S
-0.54
A
Pulsed Source Current (Body Diode)
I
SM
-7.4
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
Linear Derating Factor
P
D
625
5
mW
mW/°C
Power Dissipation (Note 6)
Linear Derating Factor
P
D
806
6.4
mW
mW/°C
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
113
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
R
θJA
73
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
6.
For a device surface mounted on FR4 PCB measured at t ≤5 secs.
7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-30
V
I
D
= -250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
-1
μA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
±100
nA
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1
V
I
D
= -250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8)
R
DS (ON)
0.15
Ω
V
GS
= -10V, I
D
= -1.6A
0.23
V
GS
= -4.5V, I
D
= -0.8A
Forward Transconductance (Notes 8 and 10)
g
fs
1.1
S
V
DS
= -10V, I
D
= -0.8A
Diode Forward Voltage (Note 8)
V
SD
-0.95
V
T
J
= +25°C, I
S
= -1.6A, V
GS
= 0V
Reverse Recovery Time (Note 10)
t
rr
19.9
ns
T
J
= +25°C, I
F
= -1.6A,
di/dt = 100A/
μs
Reverse Recovery Charge (Note 10)
Q
rr
13
nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
330
pF
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
120
Reverse Transfer Capacitance
C
rss
45
Turn-On Delay Time (Note 9)
t
d(on)
2.8
ns
V
DD
= -15V, I
D
= -1.6A,
R
G
6.2
Ω
R
D
25
Ω
Turn-On Rise Time (Note 9)
t
r
6.4
Turn-Off Delay Time (Note 9)
t
d(off)
13.9
Turn-Off Fall Time (Note 9)
t
f
10.3
Total Gate Charge (Note 9)
Q
g
10.2
nC
V
DS
= -24V, V
GS
= -10V,
I
D
= -1.6A
Gate-Source Charge (Note 9)
Q
gs
1.5
Gate-Drain Charge (Note 9)
Q
gd
3
Notes:
8. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.