Zxm61p03f – Diodes ZXM61P03F User Manual
Page 2
ZXM61P03F
S E M I C O N D U C T O R S
ISSUE 1 - OCTOBER 2005
2
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
θJA
200
°C/W
Junction to Ambient (b)
R
θJA
155
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
р5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-30
V
Gate- Source Voltage
V
GS
Ϯ20
V
Continuous Drain Current
(V
GS
=-10V; T
A
=25°C)(b)
(V
GS
=-10V; T
A
=70°C)(b)
I
D
-1.1
-0.9
A
Pulsed Drain Current (c)
I
DM
-4.3
A
Continuous Source Current (Body Diode)(b)
I
S
-0.88
A
Pulsed Source Current (Body Diode)(c)
I
SM
-4.3
A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
P
D
625
5
mW
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
806
6.4
mW
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C