Diodes ZXM64P02X - Manual (Page 4)

ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
-20 V I
D
=-250
µ
A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
-1 µ A V
DS
=-20V, V
GS
=0V
Gate-Body Leakage I
GSS
±
100 nA V
GS
=
±
12V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
-0.7 V I
D
=-250
µ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1) R
DS(on)
0.090
0.13 Ω
Ω
V
GS
=-4.5V, I
D
=-2.4A
V
GS
=-2.7V, I
D
=-1.2A
Forward Transconductance (3) g
fs
2.6 S V
DS
=-10V,I
D
=-1.2A
DYNAMIC (3)
Input Capacitance C
iss
900 pF
V
DS
=-15 V, V
GS
=0V,
f=1MHz Output Capacitance C
oss
350 pF
Reverse Transfer Capacitance C
rss
150 pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on)
5.6 ns
V
DD
=-10V, I
D
=-2.4A
R
G
=6.0 Ω , R
D
=4.0 Ω
(Refer to test circuit)
Rise Time t
r
12.3 ns
Turn-Off Delay Time t
d(off)
45.5 ns
Fall Time t
f
40.0 ns
Total Gate Charge Q
g
6.9 nC
V
DS
=-16V,V
GS
=-4.5V,
I
D
=-2.4A
(Refer to test circuit)
Gate-Source Charge Q
gs
1.3 nC
Gate Drain Charge Q
gd
2.5 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
-0.95 V T
j
=25°C, I
S
=-2.4A,
V
GS
=0V
Reverse Recovery Time (3) t
rr
46.0 ns T
j
=25°C, I
F
=-2.4A,
di/dt= 100A/
µ
s
Reverse Recovery Charge(3) Q
rr
35.0 nC
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
4
ZXM64P02X
I ssue 2- February 2008