Zxmn15a27k, Maximum ratings, Thermal characteristics – Diodes ZXMN15A27K User Manual
Page 2
ZXMN15A27K
Document Number DS31978 Rev. 2 - 2
2 of 8
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN15A27K
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Drain-Source voltage
V
DSS
150 V
Gate-Source voltage
V
GS
±25
V
Single Pulsed Avalanche Energy
(Note 7)
E
AS
55 mJ
Single Pulsed Avalanche Energy
(Note 7)
I
AS
4.3 A
Repetitive Avalanche Energy
(Note 4)
E
AR
3.0 mJ
Repetitive Avalanche Current
(Note 4)
I
AR
4.3 A
Continuous Drain current
V
GS
= 10V
(Note 3)
T
A
= 70
°C (Note 3)
(Note 2)
I
D
2.55
2.0
1.7
A
Pulsed Drain current
V
GS
= 10V (Note 4)
I
DM
17.2 A
Continuous Source current (Body diode)
(Note 2)
I
S
5.2 A
Pulsed Source current (Body diode)
(Note 4)
I
SM
17.2 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power dissipation
Linear derating factor
(Note 2)
P
D
4.2
33.6
W
mW/
°C
(Note 3)
9.5
76.0
(Note 6)
2.2
17.2
Thermal Resistance, Junction to Ambient
(Note 2)
R
θJA
30.2
°C/W
(Note 3)
13.1
(Note 6)
58.1
Thermal Resistance, Junction to Lead
(Note 5)
R
θJL
2.06
°C/W
Operating and storage temperature range
T
J
, T
STG
-55 to 150
°C
Notes:
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. The device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t
≤ 10 sec.
4. Same as note 2, except the device is operating in a repetitive state with pulse width and duty cycle limited by maximum junction temperature.
5. Thermal resistance from junction to solder-point at the end of the drain lead.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition..
7. UIS in production with L = 5.95mH, I
AS
= 4.3A, R
G
= 25
Ω, V
DD
= 100V, starting T
J
= 25°C.