Diodes ZXMN10A25G - Manual (Page 2)

ZXMN10A25G
Document number: DS33568 Rev. 3 - 2
2 of 7
www.diodes.com
April 2014
© Diodes Incorporated
ZXMN10A25G
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
100 V
Gate-Source Voltage V
GSS
20 V
Continuous Drain Current, V
GS
= 10V, t ≦10 sec
T
A
= +25°C
T
A
= +70°C
I
D
4.0
3.2
A
Continuous Drain Current (Note 5) V
GS
= 10V T
A
= +25°C I
D
2.9
Maximum Continuous Body Diode Forward Current (Note 5) I
S
5.4 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
17 A
Pulsed Source Current (10μs pulse, duty cycle = 1%) I
SM
17 A
Thermal Resistance
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5), T A = +25°C
Linear derating factor
P
D
2.0 W
mW/°C 16
Thermal Resistance, Junction to Ambient (Note 5) R
JA
62.5 °C/W
Total Power Dissipation (Note 5), T A = +25°C, t ≦10 sec
Linear derating factor
P
D
3.9
31
W
mW/°C
Thermal Resistance, Junction to Ambient, t ≦10 sec. (Note 5) R
JA
32 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)