Thermal resistance, Absolute maximum ratings – Diodes ZXMN10A08DN8 User Manual
Page 2
ZXMN10A08DN8
S E M I C O N D U C T O R S
ISSUE 4 - JANUARY 2005
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient (a)
R
θJA
100
°C/W
Junction to ambient (b)
R
θJA
69
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
р5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300
s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
V
DSS
100
V
Gate source voltage
V
GS
20
V
Continuous drain current V
GS
=10V; T
A
=25°C
(b)
V
GS
=10V; T
A
=70°C
(b)
V
GS
=10V; T
A
=25°C
(a)
I
D
2.1
1.7
1.6
A
Pulsed drain current
(c)
I
DM
9
A
Continuous source current (body diode)
(b)
I
S
2.6
A
Pulsed source current (body diode)
(c)
I
SM
9
A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
1.25
10
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
1.8
14.5
W
mW/°C
Operating and storage temperature range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS