Diodes ZVNL120G - Manual (Page 2)

TYPICAL CHARACTERISTICS
Output Characteristics
V DS - Drain Source Voltage (Volts)
I D(
O
n )
Dr
a
in
C
u
rr
en
t (Amp
s
)
Saturation Characteristics
I D(
O
n ) Drain Current (Amps)
V DS - Drain Source Voltage (Volts)
0 5 10 15 20 25 30 35 40 45 50
4V
3V
V GS =
1.6
1.2
0.4
0
0.8
1.4
1.0
0.6
0.2
10V
4V
3V
V GS =
0.6
0
0.2
0.4
0.8
0 2 4 6 8 10
1.0
8V
5V
2V 2V
8V
6V
V GS- Gate Source Voltage (Volts)
300
0
100
200
400
1 2 3 4 5 6 7 8 9 10
500
V DS= 25V
Transconductance v gate-source voltage
g fs
-T
ransconductance (mS)
Transconductance v drain current
I D - Drain Current (Amps )
g fs
-T
ran
sc
o
n
ducta
n
c
e
(
mS
)
0 0.2 0.4 0.6 0.8 1.0
0
100
200
400
300
500
1.2 1.4 1.6 1.8 2.0
V DS= 25V
10V
6V
Transfer Characteristics
I D(
O
n
)
Dr
a
in
C
u
rr
e
nt
(Amps
)
V GS- Gate Source Voltage (Volts)
0 1 2 3 4 5 6 7 8 9 10
V DS=
40V
0.8
0
1.6
1.2
0.6
1.4
1.0
0.4
0.2
20V
10V
V DS -Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-
Capa
c
ita
n
c
e
(
p
F
)
C oss
C iss
C rss
0 10 20 30 40 50
60
40
20
80
100
TYPICAL CHARACTERISTICS
Normalised R DS(on) and V GS(th) vs Temperature
No
rma
lis
e
d
R
DS(on)
and V
G
S(
th)
-40 -20 0 20 40 60 80 120 100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
ur
ce R
es
ista
nc
e R DS(
on )
Gate Thresho
ld Voltage V
GS(th)
T j -Junction Temperature (C°)
0.4
-80 -60
Q-Charge (nC)
V
G
S
-Gate Source V
oltage (V
olts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V DS =
50V I D= 700mA
100V
150V
0.4 0.8 1.2 1.6 2.0 2.4
I D= 125mA
V GS= 3V
I D= 1mA
V GS= V DS
On-resistance v drain current
I D- Drain Current (mA) R
DS(o
n
) -D
ra
in
So
u
rce
On
R
esist
anc
e
(
Ω
)
10 100 1000
3V 4V V GS =2V
100
10 10V
5V
I D= 250mA
V GS= 5V
On-resistance vs gate-source voltage
V GS -Gate Source Voltage (Volts)
R
DS(ON
)
-D
ra
in
So
u
rce
Res
ist
a
n
ce
(
Ω )
1 10 20
I D=
1A
0.5A
0.1A
1
10
100
1
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