Diodes ZVN4525E6 - Manual (Page 4)

ISSUE 1 - MARCH 2001
ZVN4525E6
4
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNI
T CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
250 285 V I
D
=1mA, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
35 500 nA V
DS
=250V, V
GS
=0V
Gate-Body Leakage I
GSS
±1 ±100 nA V
GS
=
±
40V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
0.8 1.4 1.8 V I
D
=1mA, V
DS
= V
GS
Static Drain-Source On-State Resistance (1) R
DS(on)
5.6
5.9
6.4 8.5
9.0
9.5
Ω
Ω
Ω
V
GS
=10V, I
D
=500mA
V
GS
=4.5V, I
D
=360mA
V
GS
=2.4V, I
D
=20mA
Forward Transconductance (3) g
fs
0.3 0.475 S V
DS
=10V,I
D
=0.3A
DYNAMIC (3)
Input Capacitance C
iss
72 pF
V
DS
=25 V, V
GS
=0V,
f=1MHz Output Capacitance C
oss
11 pF
Reverse Transfer Capacitance C
rss
3.6 pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on)
1.25 ns
V
DD
=30V, I
D
=360mA
R
G
=50
Ω
, V
qs
=10V
(refer to test circuit)
Rise Time t
r
1.70 ns
Turn-Off Delay Time t
d(off)
11.40 ns
Fall Time t
f
3.5 ns
Total Gate Charge Q
g
2.6 3.65 nC
V
DS
=25V,V
GS
=10V,
I
D
=360mA(refer to
test circuit)
Gate-Source Charge Q
gs
0.2 0.28 nC
Gate Drain Charge Q
gd
0.5 0.70 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
0.97 V T
j
=25°C, I
S
=360mA,
V
GS
=0V
Reverse Recovery Time (3) t
rr
186 260 ns T
j
=25°C, I
F
=360mA,
di/dt= 100A/
µ
s
Reverse Recovery Charge (3) Q
rr
34 48 nC
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.