Diodes ZVN3310A - Manual

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
= 10 Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
100 V
Continuous Drain Current at T amb =25°C I D 200 mA
Pulsed Drain Current I
DM
2 A
Gate-Source Voltage V GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
625 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BV
DSS
100 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage V
GS(th)
0.8 2.4 V ID=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current I
DSS
1
50 µ A
µ A
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C (2)
On-State Drain Current(1) I D(on) 500 mA V DS =25V, V GS =10V
Static Drain-Source On-State
Resistance (1) R
DS(on)
10 Ω V
GS
=10V,I
D
=500mA
Forward Transconductance(1)(2
) g fs 100 mS V DS =25V,I D =500mA
Input Capacitance (2) C
iss
40 pF
Common Source Output
Capacitance (2) C
oss
15 pF V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2) C
rss
5 pF
Turn-On Delay Time (2)(3) t
d(on)
5 ns
V DD
≈ 25V, I D =500mA
Rise Time (2)(3) t
r
7 ns
Turn-Off Delay Time (2)(3) t
d(off)
6 ns
Fall Time (2)(3) t f 7 ns
E-Line
TO92 Compatible
ZVN3310A
3-378
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
V DS - Drain Source Voltage (Volts)
I D(
O
n )
-On-
S
tat
e
Drain Cur
re
n
t (
Am
ps)
Transfer Characteristics
0 2 4 6 8 10 0 10 20 30 40 50
Saturation Characteristics
6
0
2
4
8
0 4 8 12 16 20
10
V DS
- Drain Source
V
oltag
e
(V
o
lts)
Voltage Saturation Characteristics
V GS- Gate Source Voltage (Volts)
5V
I D=
1A
0.5A
0.2A
I D(
O
n )-
On-Sta
te D
rain
C
urrent (Amp
s
)
V GS- Gate Source Voltage (Volts)
1.4
1.2
0.8
0.2
0
0.4
1.0
0.6
V GS=
10V
7V
8V
I D(O
n
)
-On-State Drain Current (Amps)
V DS - Drain Source Voltage (Volts)
On-resistance vs gate-source voltage
V GS -Gate Source Voltage (Volts)
R
DS(ON
)
-D
ra
in
So
u
rce
Res
ist
a
n
ce
(
Ω
)
1 2 3 4 5 6 7 8 9 10 20
6V
4V
3V
1.6
1.2
0.4
0
0.8
0 2 4 6 8 10
1.4
1.2
0.8
0.2
0
0.4
1.0
0.6
V DS=
25V
9V
1.4
1.0
0.6
0.2
5V
V GS=
10V
7V
8V
6V
4V
3V
9V
I D=
1A
0.5A
0.2A
1
10
100
Normalised R DS(on) and V GS(th) vs Temperature
Normalised R
DS(
o
n)
a
n
d V
GS(th)
-40 -20 0 20 40 60 80 120 100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
urce
R
esi
sta
nc
e R
DS(
on )
Gate Threshold Vo
ltage V
GS(th)
I D=- 0.5A
T-Temperature (C°)
0.4
-80 -60
ZVN3310A
3-379