Diodes ZVN2110G - Manual

ZVN2110G
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – OCTOBER 1995 ✪
FEATURES
* 6A PULSE DRAIN CURRENT
* FAST SWITCHING SPEED
PARTMARKING DETAIL - ZVN2110
COMPLEMENTARY TYPE - ZVP2110G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V DS 100 V
Continuous Drain Current at T
amb
=25°C I
D
500 mA
Pulsed Drain Current I DM 6 A
Gate Source Voltage V
GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
2 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage BV DSS 100 V I D =1mA, V GS =0V
Gate-Source Threshold Voltage V GS(th) 0.8 2.4 V I
D
=1mA, V DS = V GS
Gate-Body Leakage I GSS 0.1 20 nA V GS = ± 20V, V DS =0V
Zero Gate Voltage Drain Current I DSS 1
100 µ A
µ A
V DS =100V, V GS =0
V DS =80V, V GS =0V, T=125°C(2)
On-State Drain Current(1) I D(on) 1.5 2 A V DS =25V, V GS =10V
Static Drain-Source On-State
Resistance (1) R DS(on) 4 Ω V GS =10V, I D =1A
Forward Transconductance (1)(2) g fs 250 350 mS V DS =25V, I D =1A
Input Capacitance (2) C iss 59 75 pF
Common Source Output
Capacitance (2) C oss 16 25 pF V DS =25 V, V GS =0V, f=1MHz
Reverse Transfer Capacitance (2) C rss 4 8 pF
Turn-On Delay Time (2)(3) t d(on) 4 7 ns
V DD
≈ 25V, I D =1A
Rise Time (2)(3) t r 4 8 ns
Turn-Off Delay Time (2)(3) t d(off) 8 13 ns
Fall Time (2)(3) t f 8 13 ns
DRAIN-SOURCE DIODE CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Diode Forward Voltage (1) V SD 0.82 V I S =0.32A, V GS =0
Reverse Recovery Time T
RR
112 ns I
F
=0.32A, V
GS
=0, I
R
=0.1A
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
ZVN2110G
D
D
S
G
TYPICAL CHARACTERISTICS
Output Characteristics
V DS - Drain Source Voltage (Volts)
Transfer Characteristics
2 4 6 8 10 0 20 40 60 80 100
Saturation Characteristics
V DS-
Dr
ai
n S
o
u rc
e
V
oltage (V
olts)
Voltage Saturation Characteristics
V GS- Gate Source Voltage (Volts) V GS- Gate Source Voltage (Volts)
V DS - Drain Source Voltage (Volts)
0 2 4 6 8 10
2.8
2.4
1.6
0.4
0
0.8
2.0
1.2
I D(
o n
)
-On-State Drain Current (Amps)
V DS= 10V
0
10
6
2
4
8
0 2 4 6 8 10
I D=
1A
500mA
100mA
I D(
o
n )
-On-State Drain Current (Amps)
I D(
o n )
-On-State Drain Current (Amps)
Normalised R DS(on) and V GS(th) v Temperature
T j -Junction Temperature (°C)
Normalised R
D S(o
n )
a nd
V
G S(
th
)
-40 -20 0 20 40 60 80 120 100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n- So
urce
R es ista
nc e R
DS(
on )
Gate Threshold Voltage V GS(TH)
I D= 1 A
V GS= 10V
I D= 1mA
V GS= V DS
180
0
0.8
0.4
1.2
2.0
1.6 8V
9V
7V
5V
4V
6V
3V
5V
4V
8V
6V
9V
7V
V
GS=
0
0.8
0.4
1.2
2.0
1.6
On-resistance v gate-source voltage
V GS- Gate Source Voltage (Volts)
RDS(on
)-
D
ra
in So
u
rce
R
esis
tance
(
Ω )
1 10 100
500mA
I D =
1A
100mA
1
10
5
V GS=
10V
3V
10V
V DS= 25V
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