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Diodes ZVN2110G User Manual

Zvn2110g, Typical characteristics, Absolute maximum ratings

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ZVN2110G

SOT223 N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 3 – OCTOBER 1995

FEATURES

*

6A PULSE DRAIN CURRENT

*

FAST SWITCHING SPEED

PARTMARKING DETAIL -

ZVN2110

COMPLEMENTARY TYPE -

ZVP2110G

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Drain-Source Voltage

V

DS

100

V

Continuous Drain Current at T

amb

=25°C

I

D

500

mA

Pulsed Drain Current

I

DM

6

A

Gate Source Voltage

V

GS

±

20

V

Power Dissipation at T

amb

=25°C

P

tot

2

W

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN. TYP. MAX. UNIT

CONDITIONS.

Drain-Source Breakdown Voltage

BV

DSS

100

V

I

D

=1mA, V

GS

=0V

Gate-Source Threshold Voltage

V

GS(th)

0.8

2.4

V

I

D

=1mA, V

DS

= V

GS

Gate-Body Leakage

I

GSS

0.1

20

nA

V

GS

=

±

20V, V

DS

=0V

Zero Gate Voltage Drain Current

I

DSS

1
100

µ

A

µ

A

V

DS

=100V, V

GS

=0

V

DS

=80V, V

GS

=0V, T=125°C(2)

On-State Drain Current(1)

I

D(on)

1.5

2

A

V

DS

=25V, V

GS

=10V

Static Drain-Source On-State
Resistance (1)

R

DS(on)

4

V

GS

=10V, I

D

=1A

Forward Transconductance (1)(2)

g

fs

250

350

mS

V

DS

=25V, I

D

=1A

Input Capacitance (2)

C

iss

59

75

pF

Common Source Output
Capacitance (2)

C

oss

16

25

pF

V

DS

=25 V, V

GS

=0V, f=1MHz

Reverse Transfer Capacitance (2)

C

rss

4

8

pF

Turn-On Delay Time (2)(3)

t

d(on)

4

7

ns

V

DD

25V, I

D

=1A

Rise Time (2)(3)

t

r

4

8

ns

Turn-Off Delay Time (2)(3)

t

d(off)

8

13

ns

Fall Time (2)(3)

t

f

8

13

ns

DRAIN-SOURCE DIODE CHARACTERISTICS

PARAMETER

SYMBOL

MIN. TYP. MAX. UNIT

CONDITIONS.

Diode Forward Voltage (1)

V

SD

0.82

V

I

S

=0.32A, V

GS

=0

Reverse Recovery Time

T

RR

112

ns

I

F

=0.32A, V

GS

=0, I

R

=0.1A

(1) Measured under pulsed conditions. Width=300

µ

s. Duty cycle

2% (2) Sample test.

(3) Switching times measured with 50

source impedance and <5ns rise time on a pulse generator

ZVN2110G

D

D

S

G

TYPICAL CHARACTERISTICS

Output Characteristics

V

DS

- Drain Source

Voltage (Volts)

Transfer Characteristics

2

4

6

8

10

0

20

40

60

80

100

Saturation Characteristics

V

DS-

Dr

ai

n S

o

u

rc

e

V

oltage (V

olts)

Voltage Saturation Characteristics

V

GS-

Gate Source Voltage

(Volts)

V

GS-

Gate Source

Voltage (Volts)

V

DS

- Drain Source

Voltage (Volts)

0

2

4

6

8

10

2.8

2.4

1.6

0.4

0

0.8

2.0

1.2

I

D(

o

n

)

-On-State Drain Current (Amps)

V

DS=

10V

0

10

6

2

4

8

0

2

4

6

8

10

I

D=

1A

500mA

100mA

I

D(

o

n

)

-On-State Drain Current (Amps)

I

D(

o

n

)

-On-State Drain Current (Amps)

Normalised R

DS(on)

and V

GS(th)

v Temperature

T

j

-Junction Temperature (°C)

Normalised R

D

S(o

n

)

a

nd

V

G

S(

th

)

-40 -20

0

20 40 60 80

120

100

140 160

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.6

0.8

Drai

n-

So

urce

R

es

ista

nc

e R

DS(

on

)

Gate Threshold Voltage V

GS(TH)

I

D=

1 A

V

GS=

10V

I

D=

1mA

V

GS=

V

DS

180

0

0.8

0.4

1.2

2.0

1.6

8V

9V

7V

5V

4V

6V

3V

5V

4V

8V

6V

9V

7V


V

GS=

0

0.8

0.4

1.2

2.0

1.6

On-resistance v gate-source voltage

V

GS-

Gate Source Voltage

(Volts)

RDS(on

)-

D

ra

in So

u

rce

R

esis

tance

(

)

1

10

100

500mA

I

D

=

1A

100mA

1

10

5

V

GS=

10V

3V

10V

V

DS=

25V

3 - 388

3 - 387